KTA1834L-GR datasheet, PDF - EEWORLD Datasheet

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KTA1834L-GR: DescriptionSmall Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size904KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1834L-GR Overview

Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3

KTA1834L-GR Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

FEATURES

・Low

Collector Saturation Voltage.

: V

CE(sat)

=0.16V(Typ.) at (I

=-4A, I

=-0.05A)

・Large

Collector Current

: I

=-10A(dc) I

=-15A(10ms, single pulse)

・Complementary

to KTC5001D/L.

KTA1834D/L

EPITAXIAL PLANAR PNP TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltag

Collector Current

Base Current

Collector Power

Dissipation

Junction Temperature

Storage Temperature Range

Ta=25℃

Tc=25℃

stg

150

-55½150

℃

-15

-2

1.0

SYMBOL

CBO

CEO

EBO

RATING

-30

-20

-6

-10

UNIT

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

(2)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Note : h

(1) Classification

GR:180~390.

CE(sat)

BE(sat)

=-2V, I

=-4.0A

=-4.0A, I

=-0.05A

=-4A, I

=-0.05A

=-5V, I

=1.5A, f=50MHz

=-10V, I

=0, f=1MHz

-0.16

-0.9

150

220

-0.25

-1.2

MHz

SYMBOL

CBO

EBO

CBO

CEO

EBO

(1) (Note)

=-20V

=-5V

=-50μ

=-1mA

=-50μ

=-2V, I

=-0.5A

TEST CONDITION

MIN.

-30

-20

-6

180

390

TYP.

MAX.

-10

UNIT

2003. 3. 27

Revision No : 5

1/3

KTA1834L-GR Related Products

	KTA1834L-GR	KTA1834D-GR
Description	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3
Maker	KEC	KEC
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	10 A	10 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	180	180
JESD-30 code	R-PSIP-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz

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