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5082-2765

Description
Mixer Diode, Low Barrier, X Band, 400ohm Z(V) Max, 6dB Noise Figure, Silicon, HERMETIC SEALED, METAL CERAMIC, H2, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size195KB,6 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
Download Datasheet Parametric Compare View All

5082-2765 Overview

Mixer Diode, Low Barrier, X Band, 400ohm Z(V) Max, 6dB Noise Figure, Silicon, HERMETIC SEALED, METAL CERAMIC, H2, 2 PIN

5082-2765 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHP(Keysight)
package instructionS-CDMW-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND
maximum impedance400 Ω
minimum impedance200 Ω
JESD-30 codeS-CDMW-F2
JESD-609 codee0
maximum noise index6 dB
Number of components1
Number of terminals2
Maximum operating frequency18 GHz
Minimum operating frequency1 GHz
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Pulse input maximum power0.125 W
Minimum pulse input power1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Schottky barrier typeLOW BARRIER
Base Number Matches1
Schottky Barrier Diodes for
Stripline, Microstrip Mixers and
Detectors
Technical Data
5082-2207/09
5082-2765/85
5082-2774/94
Features
Small Size
• Low Noise Figure
6 dB Typical at 9 GHz
• Rugged Design
• High Uniformity
• High Burnout Rating
1 W RF Pulse Power Incident
• Both Medium and Low
Barrier Available
Outline C2
C
P
= 0.055 pF
ANGLE CUT 30-50°
ALTERNATE 0.13 (.005)
DIA. HOLE 1.5 (0.06)
FROM END
CATHODE
Package Characteristics
These diodes are designed for
microstrip and stripline use. The
kovar leads provide good
continuity of transmission line
impedance to the diode. Outline
C2 is a plastic on ceramic
package. Outline H2 has a metal
ceramic hermetic seal. The
ceramic is alumina. Metal parts
are gold plated kovar.
0.10
(0.004)
TYP.
0.46 (0.018)
0.30 (0.012)
1.40 (0.055)
1.14 (0.045)
SQUARE
3.81 (0.150)
MIN.
Description/Applications
This family consists of medium
barrier and low barrier beam lead
diodes mounted in easily handled
carrier packages. Low barrier
diodes provide optimum noise
figure at low local oscillator drive
levels. Medium barrier diodes
provide a wider dynamic range for
lower distortion mixer designs.
Application Note 976 presents
design techniques for an X-Band
mixer.
Note:
For new designs, the HSMS-286X and
HSMS-820X series of surface mount
microwave diodes are recommended.
0.36 (0.014)
MAX.
1.27 (0.050)
MAX.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Outline H2
C
P
= 0.175 pF
The hermetic package, outline H2,
is capable of passing many of the
environmental tests of MIL-STD-
750. The applicable solderability
test is reference 2031.1: 260°C,
10 seconds.
2.59 (0.102)
2.06 (0.081)
LID DIA.
CATHODE
0.58 (0.023)
0.43 (0.017)
2.64 (0.104)
2.34 (0.092)
3.30 (0.130)
SQUARE
MIN.
0.20 (0.008)
0.10 (0.004)
0.89 (0.035)
0.64 (0.025) 0.18 (0.007)
KOVAR LEADS,
Au PLATED
0.08 (0.003)
DIMENSIONS IN MILLIMETERS AND (INCHES).

5082-2765 Related Products

5082-2765 5082-2209 5082-2207 5082-2785 5082-2294
Description Mixer Diode, Low Barrier, X Band, 400ohm Z(V) Max, 6dB Noise Figure, Silicon, HERMETIC SEALED, METAL CERAMIC, H2, 2 PIN Mixer Diode, Medium Barrier, X Band, 500ohm Z(V) Max, 6.5dB Noise Figure, Silicon, PLASTIC, C2, 2 PIN Mixer Diode, Medium Barrier, X Band, 500ohm Z(V) Max, 6dB Noise Figure, Silicon, PLASTIC, C2, 2 PIN Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, HERMETIC SEALED, METAL CERAMIC, H2, 2 PIN Mixer Diode, Medium Barrier, X Band, Silicon
package instruction S-CDMW-F2 S-PDMW-F2 S-PDMW-F2 S-CDMW-F2 S-PXMW-F4
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE RING, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE
frequency band X BAND X BAND X BAND X BAND X BAND
JESD-30 code S-CDMW-F2 S-PDMW-F2 S-PDMW-F2 S-CDMW-F2 S-PXMW-F4
Number of components 1 1 1 1 4
Number of terminals 2 2 2 2 4
Package body material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE
Package form MICROWAVE MICROWAVE MICROWAVE MICROWAVE MICROWAVE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL UNSPECIFIED
Schottky barrier type LOW BARRIER MEDIUM BARRIER MEDIUM BARRIER LOW BARRIER MEDIUM BARRIER
Base Number Matches 1 1 1 1 1
Is it Rohs certified? incompatible incompatible incompatible incompatible -
Contacts 2 2 2 2 -
maximum impedance 400 Ω 500 Ω 500 Ω 250 Ω -
minimum impedance 200 Ω 250 Ω 250 Ω 100 Ω -
JESD-609 code e0 e0 e0 e0 -
maximum noise index 6 dB 6.5 dB 6 dB 6.5 dB -
Maximum operating frequency 18 GHz 18 GHz 18 GHz 12 GHz -
Minimum operating frequency 1 GHz 1 GHz 1 GHz 1 GHz -
Maximum operating temperature 200 °C 125 °C 125 °C 150 °C -
Pulse input maximum power 0.125 W 0.125 W 0.125 W 0.125 W -
Minimum pulse input power 1 W 1 W 1 W 1 W -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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Index Files: 598  1220  505  1947  2362  13  25  11  40  48 
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