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BZX85B200-TAP

Description
Zener Diode, 200V V(Z), 2%, 1.3W,
CategoryDiscrete semiconductor    diode   
File Size220KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

BZX85B200-TAP Overview

Zener Diode, 200V V(Z), 2%, 1.3W,

BZX85B200-TAP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance1500 Ω
JESD-609 codee3
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1.3 W
Nominal reference voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Maximum voltage tolerance2%
Working test current1.5 mA
Base Number Matches1
VISHAY
BZX85-Series
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• For use in stabilizing and clipping circuits with high
power rating.
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix "C"
with "B" for ± 2 % tolerance.
17173
Applications
Voltage stabilization
Mechanical Data
Case:
DO-41 Glass case
Weight:
approx. 310 mg
Packaging Codes/Options:
TR / 5 k per 13" reel (52 mm tape), 25 k/box
TAP / 5 k per ammo pack (52 mm tape), 25 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current (see Table "Electrical
Characteristics")
Power dissipation
1)
Test condition
Symbol
Value
Unit
P
tot
1.3
1)
W
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
130
1)
175
- 55 to + 175
Unit
°C/W
°C
°C
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature
Document Number 85607
Rev. 1.7, 14-Jun-04
www.vishay.com
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