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BCW31R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size27KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BCW31R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCW31R Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JUNE 1995
PARTMARKING DETAILS
– BCW31 – D1
BCW32 – D2
BCW33 – D3
BCW31R – D4
BCW32R – D5
BCW33R – D6
BCW31
BCW32
BCW33
E
C
B
COMPLEMENTARY TYPES
– BCW31 - BCW29
– BCW32 - BCW30
– BCW33 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
32
32
5
200
100
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Base - Emitter Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector- Base Cut-Off Current
BCW31
Static Forward
Current Transfer
Ratio
BCW32
BCW33
Transition Frequency
Collector Capacitance
Noise Figure
SYMBOL
V
BE
V
CE(SAT)
V
BE(SAT)
I
CBO
h
FE
h
FE
h
FE
f
T
C
TC
N
110
200
420
90
150
270
300
4
10
MIN.
550
120
210
750
850
100
10
220
450
800
MHz
pF
dB
TYP.
MAX.
700
250
UNIT
mV
mV
mV
mV
mV
µ
A
CONDITIONS.
I
C
=2mA, V
CE
= 5V
I
C
=10mA, I
B
= 0.5mA
I
C
=50mA, I
B
=2.5mA
I
C
=10mA, I
B
=0.5mA
I
C
=50mA, I
B
=2.5mA
I
E
=0, V
CB
=20V
I
E
=0,V
CB
=20V,T
j=100°C
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
f = 35MHz
I
E
=I
e
=0, V
CB
=10V
f= 1MHz
I
C
= 200mA, V
CE
=5V
R
S
=2K
, f=1KHz
B= 200Hz
nA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
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