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MAAPGM0012-DIE

Description
31500MHz - 36000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 0.150 X .060 INCH, 0.003 INCH HEIGHT, DIE
CategoryWireless rf/communication    Radio frequency and microwave   
File Size261KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MAAPGM0012-DIE Overview

31500MHz - 36000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 0.150 X .060 INCH, 0.003 INCH HEIGHT, DIE

MAAPGM0012-DIE Parametric

Parameter NameAttribute value
MakerTE Connectivity
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Gain16 dB
Maximum input power (CW)10 dBm
Maximum operating frequency36000 MHz
Minimum operating frequency31500 MHz
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum voltage standing wave ratio1.8
Base Number Matches1
RO-P-DS-3059 - -
50 mW Ka-Band Power Amplifier
31.5-36.0 GHz
Preliminary Information
MAAPGM0012-DIE
Features
31.5-36.0 GHz GaAs MMIC Amplifier
50 mW Output Power Level
31.5 - 36.0 GHz Operation
Variable Drain Voltage (4-6V) Operation
Single Voltage Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
Radar Applications
Satellite Communications
Description
The
MAAPGM0012-DIE
is a 3-stage, 50 mW, Ka-Band
power amplifier with on-chip bias networks. This product is
fully matched to 50 ohms on both the input and output. It
can be used as a power amplifier stage or as a driver stage
in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/
A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG
®
) MESFET
Process. This process provides polyimide scratch protec-
tion.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 5V, P
in
= 5 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Drain Current
1. T
B
= MMIC Base Temperature
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
VSWR
I
DD
Typical
31.5-36.0
17
5
16
16
2.5:1
1.8:1
< 200
mA
Units
GHz
dBm
%
dBm
dB
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