31DF4B0 datasheet, PDF - EEWORLD Datasheet

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31DF4B0: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; File Size418KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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31DF4B0 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,

31DF4B0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak forward current	45 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	20 µA
Maximum reverse recovery time	0.035 µs
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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CREAT BY ART

31DF4 - 31DF6

3.0AMPS. Super Fast Rectifiers

DO-201AD

Features

High efficiency, low VF

High current capability

High reliability

High surge current capability

Low power loss

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Cases: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode end

High temperature soldering guaranteed:

260℃/10 seconds

Weight: 1.2 grams

Ordering Information (example)

Part No.

31DF4

Package

DO-201AD

Packing

500 / AMMO box

INNER

TAPE

52mm

Packing code

(Green)

A0G

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

Maximum Instantaneous Forward Voltage (Note 1)

@3A

Maximum DC Reverse Current at Rated @ T

=25

℃

DC Blocking Voltage

@ T

=125

℃

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

Symbol

RRM

RMS

F(AV)

FSM

Trr

θJA

STG

31DF4

400

280

400

1.7

100

- 40 to + 150

31DF6

600

420

600

Units

C/W

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Version:E13

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