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MCK22-8

Description
Sensitive Gate Silicon Controlled Rectifiers
File Size523KB,5 Pages
ManufacturerETC
Download Datasheet View All

MCK22-8 Overview

Sensitive Gate Silicon Controlled Rectifiers

Preliminary
SemiWell
Semiconductor
MCK22-8
Symbol
3. Gate
Sensitive Gate
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 1.5 A )
Low On-State Voltage (1.2V(Typ.)@I
TM
)
1
2
3
2. Anode
1. Cathode
SOT- 89
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
Half Sine Wave : T
C
=99 °C
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
T
A
=25°C, Pulse Width
1.0㎲
T
A
=25°C, t = 8.3ms
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
A
2
s
W
W
A
V
°C
°C
1.0
1.5
15
0.9
0.5
0.1
0.2
5.0
- 40 ~ 125
- 40 ~ 150
Nov, 2003. Rev. 0
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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