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BUK9628-55118

Description
TRANSISTOR 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size255KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUK9628-55118 Overview

TRANSISTOR 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK9628-55118 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)70 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

BUK9628-55118 Related Products

BUK9628-55118 BUK9628-55,118
Description TRANSISTOR 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 40A, 55V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, ESD PROTECTION LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas) 70 mJ 70 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (ID) 40 A 40 A
Maximum drain-source on-resistance 0.028 Ω 0.028 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 160 A 160 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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