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BA783S/D3

Description
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
CategoryDiscrete semiconductor    diode   
File Size79KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BA783S/D3 Overview

Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon

BA783S/D3 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
technologyPLANAR DOPED BARRIER
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BA782 and BA783
Tuner Diodes
SOD-123
.022 (0.55)
Cathode Band
Pad Layout SOD-123
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Top View
0.094 (2.40)
0.055 (1.40)
0.055 (1.40)
.010 (0.25)
min.
.006 (0.15)
max.
.004 (0.1)
max.
.067 (1.70)
.055 (1.40)
.053 (1.35)
max.
Dimensions in inches
and (millimeters)
Mechanical Data
Case:
SOD-123 plastic case
Weight:
approximately 0.01 grams
Cathode Band Color:
Blue
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape)
D4/3K per 7” reel (8mm tape)
Features
• Silicon Epitaxial Planar Diode Switches
• For electric bandswitching in radio and TV tuners
in the frequency range of 50...1000 MHz. The
dynamic forward resistance is constant and very
small over a wide range of frequency and forward
current. The reverse capacitance is also small and
largely independent of the reverse voltage.
• These diodes are also available in SOD-323 case
with the type designations BA782S and BA783S.
Maximum Ratings and Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
T
j
T
S
Value
35
100
125
–55 to +125
Unit
V
mA
°C
°C
2/28/00

BA783S/D3 Related Products

BA783S/D3 BA782S/D4 BA783S/D4 BA782S/D3
Description Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
Maker Vishay Vishay Vishay Vishay
package instruction R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum diode capacitance 1.2 pF 1.25 pF 1.2 pF 1.25 pF
Diode component materials SILICON SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE
frequency band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
technology PLANAR DOPED BARRIER PLANAR DOPED BARRIER PLANAR DOPED BARRIER PLANAR DOPED BARRIER
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1
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