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BDY26C

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size209KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BDY26C Overview

Transistor

BDY26C Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY26
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 180V(Min.)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 0.6V(Max)@ I
C
= 2A
·High
Switching Speed
APPLICATIONS
·Designed
for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
300
UNIT
V
180
10
6
V
V
A
3
87.5
200
-65~200
A
W
P
C
T
J
T
stg
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc Website:www.iscsemi.cn
1

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BDY26C BDY26A BDY26B
Description Transistor Transistor Transistor
Reach Compliance Code unknown unknown unknown
Base Number Matches 1 1 1
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