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FBI5.1D1M1-4

Description
Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerFagor Electrónica
Environmental Compliance
Download Datasheet Parametric Compare View All

FBI5.1D1M1-4 Overview

Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4

FBI5.1D1M1-4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFagor Electrónica
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage80 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
FBI5.1B1M1.......FBI5.1J1M1
5 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
25
3.2
Plastic
Case
3.5
Voltage
100 to 600 V.
Current
5.0 A.
®
_
1
+ 0.05
+
• Glass Passivated Junction Chips.
L
7.5
7.5
10
suffix
–4
1
0.7
UL recognized under component index file
number E320541.
Lead and polarity identifications.
Case: Molded Plastic.
Ideal for printed circuit board (P.C.B.).
High surge current capability.
The plastic material carries U/L recognition 94 V-O.
17.5
8
• Mounting Instructions
High temperature soldering guaranteed: 260 ºC – 10 sc.
Recommended mounting torque: 8 Kg.cm.
Maximum Ratings, according to IEC publication No. 134
FBI5.1B
1M1
FBI5.1D
1M1
200
140
80
FBI5.1F
1M1
300
210
125
FBI5.1J
1M1
600
420
250
V
RRM
V
RMS
V
R
I
F(AV)
I
FRM
I
FSM
I
2
t
V
DIS
T
j
T
stg
Peak Recurrent Reverse Voltage (V)
Maximum RMS Voltage (V)
Recommended Input Voltage (V)
Max. Average forward current with heatsink
without heatsink
Recurrent peak forward current
10 ms. peak forward surge current
I
2
t value for fusing (t = 10 ms)
Dielectric strength
(terminals to case, AC 1 min.)
Operating temperature range
Storage temperature range
100
70
40
5.0 A at 100 ºC
3.0 A at 25 ºC
30 A
400 A
800 A
2
sec
1500 V
– 40 to + 150 °C
– 40 to +150 ºC
Electrical Characteristics at Tamb = 25°C
V
F
I
R
R
th (j-c)
R
th (j-a)
Max. forward voltage drop per element at I
F
= 5 A
Max. reverse current per element at V
RRM
MAXIMUM THERMAL RESISTANCE
Junction-Case. With Heatsink.
Junction-Ambient. Without Heatsink.
1.1 V
5 A
2.2 ºC/W
22 ºC/W
Dec - 08

FBI5.1D1M1-4 Related Products

FBI5.1D1M1-4 FBI5.1J1M1-4 FBI5.1F1M1-4 FBI5.1B1M1-4
Description Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 3A, 300V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 3A, 100V V(RRM), Silicon, PLASTIC PACKAGE-4
Is it Rohs certified? conform to conform to conform to conform to
package instruction PLASTIC PACKAGE-4 PLASTIC PACKAGE-4 R-PSFM-T4 PLASTIC PACKAGE-4
Contacts 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 80 V 250 V 125 V 40 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e3 e3 e3 e3
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Maximum output current 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 600 V 300 V 100 V
surface mount NO NO NO NO
Terminal surface TIN TIN TIN TIN
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Fagor Electrónica Fagor Electrónica - Fagor Electrónica
ECCN code EAR99 - EAR99 EAR99
Base Number Matches 1 1 1 -
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