CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
specification.
Electrical Specifications
T
A
= 25°C
(NOTE 3)
TEST
LEVEL
PARAMETER
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
I
C
= 10µA, I
E
= 0
I
C
= 100µA, I
B
= 0
I
C
= 100µA, R
B
= 10kΩ
I
E
= 10µA, I
C
= 0
V
CE
= 6V, I
B
= 0
V
CB
= 8V, I
E
= 0
V
EB
= 1V, I
C
= 0
A
A
A
B
A
A
B
C
12
4
11
-
-5
-5
-
-
-
-
-
-
-
-
48
48
48
48
48
48
-
20
21
9
17
6
-
-
1
1
95
780
1.2
1.0
0.7
-1.5
80
87
90
96
96
100
2
30
-
-
-
-
5
5
-
-
250
1000
6
6
6
-
200
200
200
200
200
200
8
-
V
V
V
V
nA
nA
pA
nA
mV
mV
mV
mV
mV
mV/°C
Emitter to Base Breakdown Voltage (Note 4)
Collector-Cutoff-Current
Collector-Cutoff-Current
Emitter-Cutoff-Current (Note 5)
Collector to Collector Leakage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage (Note 5)
Q
1
to Q
2
Base to Emitter Voltage Match
(Note 5)
V
(BR)EBO
I
CEO
I
CBO
I
EBO
V
CE(SAT)
V
BE
∆V
BE
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, V
CE
= 2V
I
C
= 10mA, V
CE
= 2V
I
C
= 1mA, V
CE
= 2V
I
C
= 0.1mA, V
CE
= 2V
A
A
A
A
A
C
A
A
A
A
A
A
A
A
Base to Emitter Voltage Drift
DC Forward-Current Transfer Ratio
(Note 5)
h
FE
I
C
= 10mA
I
C
= 10mA, V
CE
= 2V
I
C
= 1mA, V
CE
= 2V
I
C
= 0.1mA, V
CE
= 2V
I
C
= 10mA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 0.1mA, V
CE
= 5V
Q
1
to Q
2
Current Transfer Ratio Match
Early Voltage
∆h
FE
V
A
1mA
≤
I
C
≤
10mA,
1V
≤
V
CE
≤
5V
I
C
= 1mA,
∆V
CE
= 3V
%
V
2
FN4445.2
August 12, 2005
HFA3134, HFA3135
Electrical Specifications
T
A
= 25°C
(Continued)
(NOTE 3)
TEST
LEVEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)
Noise Figure
NF
f = 1.0GHz, I
C
= 10mA,
1V
≤
V
CE
≤
5V, Z
S
= 50Ω
f = 1.0GHz, I
C
= 1mA,
1V
≤
V
CE
≤
5V, Z
S
= 50Ω
Current Gain-Bandwidth Product
(Note 5)
Power Gain-Bandwidth Product
Base to Emitter Capacitance
Collector to Base Capacitance
f
T
I
C
= 10mA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
f
MAX
I
C
= 10mA, V
CE
= 5V
V
BE
= -0.5V
V
CB
= 3V
T
A
= 25°C
(NOTE 3)
TEST
LEVEL
B
B
B
B
B
B
B
-
-
-
-
-
-
-
2.4
2.6
8.5
3
7.5
600
500
-
-
-
-
-
-
-
dB
dB
GHz
GHz
GHz
fF
fF
Electrical Specifications
PARAMETER
DC CHARACTERISTICS FOR HFA3135 (PNP)
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
I
C
= -10µA, I
E
= 0
I
C
= -100µA, I
B
= 0
I
C
= -100µA, R
B
= 10kΩ
I
E
= -10µA, I
C
= 0
V
CE
= -6V, I
B
= 0
V
CB
= -8V, I
E
= 0
V
EB
= -1V, I
C
= 0
A
A
A
B
A
A
B
B
12
4
11
-
-5
-5
-
-
-
-
-
-
-
15
15
15
15
15
15
-
15
-
21
14
23
5
-
-
TBD
1
150
850
1
1
2
40
47
52
47
53
57
1
24
-1.4
-
-
-
-
5
5
-
-
250
1000
6
6
6
125
125
125
125
125
125
8
-
-
V
V
V
V
nA
nA
pA
nA
mV
mV
mV
mV
mV
Emitter to Base Breakdown Voltage (Note 4)
Collector-Cutoff-Current
Collector-Cutoff-Current
Emitter-Cutoff-Current
Collector to Collector Leakage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Q
1
to Q
2
Base to Emitter Voltage Match
V
(BR)EBO
I
CEO
I
CBO
I
EBO
V
CE(SAT)
V
BE
∆V
BE
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA, V
CE
= -2V
I
C
= -10mA, V
CE
= -2V
I
C
= -1mA, V
CE
= -2V
I
C
= -0.1mA, V
CE
= -2V
A
A
A
A
A
A
A
A
A
A
A
A
A
C
DC Forward-Current Transfer Ratio
h
FE
I
C
= -10mA, V
CE
= -2V
I
C
= -1mA, V
CE
= -2V
I
C
= -0.1mA, V
CE
= -2V
I
C
= -10mA, V
CE
= -5V
I
C
= -1mA, V
CE
= -5V
I
C
= -0.1mA, V
CE
= -5V
Q
1
to Q
2
Current Gain Match
Early Voltage
Base to Emitter Voltage Drift
∆h
FE
V
A
-1mA
≤
I
C
≤
-10mA,
-1V
≤
V
CE
≤
-5V
I
C
= -1mA,
∆V
CE
= -3V
I
C
= -10mA
%
V
mV/°C
3
FN4445.2
August 12, 2005
HFA3134, HFA3135
Electrical Specifications
T
A
= 25°C
(Continued)
(NOTE 3)
TEST
LEVEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure
NF
f = 900MHz, I
C
= -10mA,
-1V
≤
V
CE
≤
-5V, Z
S
= 50Ω
f = 900MHz, I
C
= -1mA,
-1V
≤
V
CE
≤
-5V, Z
S
= 50Ω
Current Gain-Bandwidth Product
Power Gain-Bandwidth Product
Base to Emitter Capacitance
Collector to Base Capacitance
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring V
EBO
can degrade the transistor h
FE
and h
FE
match.
5. See Typical Performance Curves for more information.
When I was reading the G2553 data sheet, I found that the pin functions include TA0.1, TA1.1, and TA1.2. I know what the latter number means, but what does the former number mean? Thanks for your help...
[color=#333333][font=Verdana, Helvetica, Arial, sans-serif]As shown in Figures 1a and 1b, with a simple modification to the buck converter schematic, the synchronous buck converter IC can be used in a...
[Abstract] Singapore, with a population of more than 4 million, is the best in Asia and second in the world in terms of "global IT networking". The government's guiding philosophy is "many institution...
DS92LV2421/DS92LV2422 are industrial serial/deserializers (SerDes) that reduce the bus width of high-bandwidth data interfaces. Using a serializer, data can be converted from a wide parallel data stre...
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
