BA892-07F datasheet, PDF - EEWORLD Datasheet

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BA892-07F: DescriptionMixer Diode, L Band, Silicon, TSFP-4; CategoryDiscrete semiconductor diode; File Size138KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BA892-07F Overview

Mixer Diode, L Band, Silicon, TSFP-4

BA892-07F Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	R-PDSO-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS
Maximum diode capacitance	1.3 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
frequency band	L BAND
JESD-30 code	R-PDSO-F4
Humidity sensitivity level	1
Number of components	2
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BA892-07F

Silicon RF Switching Diode

Preliminary data

For band switching in TV/VTR tuners

up to 2GHz

Very low forward resistance

(very low insertion loss)

small capacitance

Ultra small SMD package for dual diodes

XYs

TSFP-4

D 1

D 2

Type

BA892-07F

Maximum Ratings

Parameter

Marking

Pin Configuration

P1s

1=C1 2=C2 3=A2 4=A1 -

Package

TSFP-4

Symbol

tot

stg

Value

100

250

-55 ... 125

-55 ... 150

Unit

°C

Diode reverse voltage

Forward current

Total power dissipation

125

Operating temperature range

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

For

Symbol

thJS

Value

100

Unit

K/W

calculation of

thJA

please refer to Application Note Thermal Resistance

Mar-08-2002

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