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HUF75343S3S

Description
0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size226KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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HUF75343S3S Overview

0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

HUF75343S3S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.009 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)270 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
HUF75343G3, HUF75343P3, HUF75343S3,
HUF75343S3S
Data Sheet
March 2003
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery
operated products.
Formerly developmental type TA75343.
Features
• 75A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance PSPICE™ and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75343G3
HUF75343P3
HUF75343S3
HUF75343S3S
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
BRAND
75343G
75343P
75343S
75343S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
JEDEC TO-262AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2003 Fairchild Semiconductor Corporation
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1

HUF75343S3S Related Products

HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3
Description 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Is it Rohs certified? conform to conform to conform to conform to
Maker Fairchild Fairchild Fairchild Fairchild
Reach Compliance Code _compli compli unknow _compli
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
Maximum drain current (Abs) (ID) 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.009 Ω 0.009 Ω 0.009 Ω 0.009 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-247 TO-220AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSFM-T3 R-PSIP-T3
JESD-609 code e3 e3 e3 e3
Number of terminals 2 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 270 W 270 W 270 W 270 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
ECCN code EAR99 EAR99 EAR99 -
Shell connection DRAIN DRAIN DRAIN -
Minimum drain-source breakdown voltage 55 V 55 V 55 V -
Maximum drain current (ID) 75 A 75 A 75 A -
Number of components 1 1 1 -
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