BUK9775-55127 datasheet, PDF - EEWORLD Datasheet

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BUK9775-55127: DescriptionTRANSISTOR 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size256KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK9775-55127 Overview

TRANSISTOR 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK9775-55127 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	30 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	11.7 A
Maximum drain-source on-resistance	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	47 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK9775-55127 Related Products

	BUK9775-55127	BUK9775-55,127	BUK9775-55
Description	TRANSISTOR 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	11.7A, 55V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET	TRANSISTOR 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, FULL PACK-3, FET General Purpose Power
Maker	NXP	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	PLASTIC, FULL PACK-3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTION	LOGIC LEVEL COMPATIBLE, ESD PROTECTION	LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	30 mJ	30 mJ	30 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V
Maximum drain current (ID)	11.7 A	11.7 A	11.7 A
Maximum drain-source on-resistance	0.075 Ω	0.075 Ω	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	47 A	47 A	47 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	-

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