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HUF75842P3

Description
43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET
File Size101KB,9 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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HUF75842P3 Overview

43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET

HUF75842P3, HUF75842S3S
Data Sheet
December 1999
File Number
4815
43A, 150V, 0.042 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
JEDEC TO-263AB
DRAIN
(FLANGE)
• Ultra Low On-Resistance
- r
DS(ON)
= 0.042Ω,
V
GS
=
10V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
GATE
SOURCE
DRAIN
(FLANGE)
HUF75842P3
HUF75842S3S
• UIS Rating Curve
Symbol
D
Ordering Information
PART NUMBER
HUF75842P3
G
PACKAGE
TO-220AB
TO-263AB
BRAND
75842P
75842S
HUF75842S3S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75842S3ST.
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75842P3
UNITS
V
V
V
A
A
150
150
±20
43
30
Figure 4
Figures 6, 14, 15
230
1.53
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
4-1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 1999.

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