HUF76129D3 datasheet, PDF - EEWORLD Datasheet

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HUF76129D3: Description20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size211KB，11 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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HUF76129D3 Overview

20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

HUF76129D3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
Parts packaging code	TO-251AA
package instruction	TO-251AA, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	105 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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HUF76129D3, HUF76129D3S

Data Sheet

January 2003

20A, 30V, 0.016 Ohm, N-Channel, Logic

Level UltraFET Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET™ process.

This advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA76129.

Features

• Logic Level Gate Drive

• 20A, 30V

• Ultra Low On-Resistance, r

DS(ON)

= 0.016Ω

• Temperature Compensating PSPICE

Model

• Temperature Compensating SABER

Mode

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

HUF76129D3

HUF76129D3S

PACKAGE

TO-251AA

TO-252AA

BRAND

76129D

Symbol

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, e.g., HUF76129D3ST.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

SOURCE

DRAIN

(FLANGE)

HUF76129D3, HUF76129D3S Rev. B1

HUF76129D3 Related Products

	HUF76129D3	HUF76129D3S
Description	20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	20 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it Rohs certified?	incompatible	incompatible
Maker	Fairchild	Fairchild
Parts packaging code	TO-251AA	TO-252AA
package instruction	TO-251AA, 3 PIN	TO-252AA, 3 PIN
Contacts	3	4
Reach Compliance Code	_compli	_compli
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	20 A	20 A
Maximum drain current (ID)	20 A	20 A
Maximum drain-source on-resistance	0.023 Ω	0.023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-252AA
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	105 W	105 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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