CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
= 55A, V
GS
= 5V (Figure 9)
I
D
= 52A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.0075
0.010
0.011
3
0.009
0.0125
0.014
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
52A,
R
L
= 0.289Ω, V
GS
=
4.5V,
R
GS
= 5.1Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
20
260
28
38
-
420
-
-
-
-
100
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-220 and TO-263
-
-
-
-
0.86
62
o
C/W
o
C/W
6-143
HUF76137P3, HUF76137S3S
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
2100
1050
225
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,
I
D
≅
55A,
R
L
= 0.273Ω
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
-
-
-
-
55
31
2.2
6.00
15.50
72
40
2.9
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.20Ω, V
GS
=
10V,
R
GS
= 5.6Ω
(Figures 16, 21, 22)
-
-
-
-
-
-
-
10
140
45
35
-
225
-
-
-
-
120
ns
ns
ns
ns
ns
ns
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 55A
I
SD
= 55A, dI
SD
/dt = 100A/µs
I
SD
= 55A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
77
143
UNITS
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
60
V
GS
= 4.5V
40
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
80
V
GS
= 10V
20
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
6-144
HUF76137P3, HUF76137S3S
Typical Performance Curves
2
1
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-3
10
-1
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
(Continued)
Z
θ
JC
, NORMALIZED
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000
1000
I
DM
, PEAK CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
=
I
25
150 - T
C
125
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
50
10
-5
FIGURE 4. PEAK CURRENT CAPABILITY
1000
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
2000
1000
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
100µs
100
STARTING T
J
= 25
o
C
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10ms
10
STARTING T
J
= 150
o
C
BV
DSS MAX
= 30V
100
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0.001
0.01
1
10
0.1
t
AV
, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
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