CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
copper pad at 10 second.
3. 189
o
C/W measured using FR-4 board with 0.0115 in
2
copper pad at 1000 seconds.
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 11.5A, V
GS
= 10V (Figures 9, 10)
I
D
= 3.3A, V
GS
= 5V (Figure 9)
I
D
= 3.2A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.0105
0.0125
0.013
3
0.0115
0.015
0.016
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
R
θJA
Pad Area = 0.76 in
2
(Note 2)
Pad Area = 0.054 in
2
(Figure 23)
Pad Area = 0.0115 in
2
(Figure 23)
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
3.2A, R
L
= 4.7Ω,
V
GS
=
4.5V, R
GS
= 6.8Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
18
36
45
30
-
80
-
-
-
-
115
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
50
152
189
o
C/W
o
C/W
o
C/W
2
HUF76132SK8
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
-
-
1560
735
150
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V, I
D
≅
3.3A,
R
L
= 4.5Ω
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
-
-
-
-
43
24
1.63
4
10
52
29
1.95
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
11.5A, R
L
= 1.3Ω,
V
GS
=
10V,
R
GS
= 6.8Ω
(Figures 16, 21, 22)
-
-
-
-
-
-
-
10
36
65
37
-
70
-
-
-
-
155
ns
ns
ns
ns
ns
ns
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
TEST CONDITIONS
I
SD
= 11.5A
I
SD
= 3.3A
Reverse Recovery Time
Reverse Recovered Charge
t
rr
Q
RR
I
SD
= 3.3A, dI
SD
/dt = 100A/µs
I
SD
= 3.3A, dI
SD
/dt = 100A/µs
-
-
-
-
MIN
-
TYP
-
MAX
1.25
1.1
58
87
UNITS
V
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
12
V
GS
= 10V, R
θJA
= 50
o
C/W
9
I
D
, DRAIN CURRENT (A)
6
3
V
GS
= 4.5V, R
θJA
= 189
o
C/W
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
3
HUF76132SK8
Typical Performance Curves
10
(Continued)
THERMAL IMPEDANCE
Z
θJA
, NORMALIZED
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
R
θJA
= 50
o
C/W
0.1
P
DM
t
1
0.01
SINGLE PULSE
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
R
θJA
= 50
o
C/W
I
DM
, PEAK CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I = I
25
150 - T
A
125
100
1
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
10
2
10
3
FIGURE 4. PEAK CURRENT CAPABILITY
500
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
A
= 25
o
C
I
D
, DRAIN CURRENT (A)
100
100µs
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
10
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
BV
DS MAX
= 30V
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1ms
STARTING T
J
= 150
o
C
10ms
1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
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