SMD Switching Diode
BAW56-HF, BAV70-HF/99-HF
RoHS Device
Halogen Free
Features
- Fast switching device (Trr < 6.0nS).
- Power dissipation of 225mW.
- High stability and high reliability.
- Low reverse leakage.
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
SOT-23
3
Mechanical data
- Case: SOT-23, molded plastic.
- Epoxy UL: 94V-0.
- Mounting position: Any.
0.041(1.05)
0.035(0.90)
1
0.079(2.00)
0.071(1.80)
2
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
Circuit Diagram
3
3
3
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.003(0.00)
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
1
2
1
2
1
2
BAW56-HF
BAV70-HF
BAV99-HF
Maximum Rating
(at Ta=25°C unless otherwise noted)
Parameter
Reverse voltage
Power dissipation
Average rectified current
Non-repetitive peak forward current
Peak forward surge current
Typical thermal resistance
Operating junction temperature
Storage temperature range
Note: Valid provided that electrodes are kept at ambient temperature.
Symbol
V
R
P
D
Io
I
FM
I
FSM
R
θJA
T
j
T
STG
Value
70
225
200
400
2
500
150
-65 to +150
Unit
V
mW
mA
mA
A
°C/W
°C
°C
@tp=1ms, T
A
=25°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-J0019
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Comchip Technology CO., LTD.
SMD Switching Diode
Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Parameter
Reverse voltage
Reverse leakage current
Conditions
I
B
= 100µA
V
R
= 70V
I
F
= 1mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Symbol
VRB
I
R
Min
70
Typ
Max
Unit
V
2.5
0.715
µA
Forward voltage
V
F
0.855
1.00
1.25
V
Capacitance
Reverse recovery time
V
R
= 0V, f = 1 MHz
I
F
= I
R
= 10mA, R
L
= 100Ω
I
rr
= 0.1 x I
R
C
T
T
RR
1.5
6
pF
nS
Rating and Characteristic Curves (BAW56-HF, BAV70-HF/99-HF)
Fig.1 - Forward Characteristics
300
100
1000
Fig.2 - Reverse Characteristics
Forward Current, I
F
(m
A
)
Reverse
Current, I
R
(nA)
C
00°
5°C
Ta=100°C
Ta=
1
100
10
Ta=
2
1
10
Ta=25°C
0.1
0
0.4
0.8
1.2
1.6
1
0
20
40
60
80
Forward Voltage, V
F
(V)
Reverse Voltage, V
R
(V)
Fig.3 - Capacitance Characteristics
Capacitance Between Terminals, C
T
(pF)
1.4
Ta = 25°C
f = 1MHz
Fig.4 - Power Derating Curve
300
Power Dissipation, P
D
(mW)
20
250
200
150
100
50
0
1.3
1.2
1.1
1.0
0
5
10
15
0
25
50
75
100
125
150
Reverse Voltage, V
R
(V)
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
QW-J0019
REV:A
Page 2
Comchip Technology CO., LTD.
SMD Switching Diode
Reel Taping Specification
P
0
P
1
d
E
F
B
C
P
A
W
12
0
o
D
2
D
1
D
W
1
40±2 Empty Pockets
100±2 Empty Pockets
SYMBOL
SOT-23
(mm)
(inch)
SYMBOL
SOT-23
(mm)
(inch)
A
3.15 ± 0.10
B
2.77 ± 0.10
C
1.22 ± 0.10
d
1.50 ± 0.10
D
178.00 ± 2.00
D
1
54.40 ± 1.00
D
2
13.00 ± 1.00
0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039
E
1.75 ± 0.10
F
3.50 ± 0.10
P
4.00 ± 0.10
P
0
4.00 ± 0.10
P
1
2.00 ± 0.10
W
8.00 ± 0.10
W
1
12.30 ± 1.00
0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 ± 0.004 0.472 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
QW-J0019
REV:A
Page 3
Comchip Technology CO., LTD.
SMD Switching Diode
Marking Code
Part Number
BAW56-HF
BAV70-HF
BAV99-HF
Marking Code
A1
A4
A7
3
XX
1
2
xx = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
A
B
C
D
E
0.90
0.80
0.95
2.00
2.90
(inch)
0.035
0.031
0.037
0.079
0.114
C
C
D
E
A
Note: 1. The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
REEL
(pcs)
Reel Size
(inch)
SOT-23
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
QW-J0019
REV:A
Page 4
Comchip Technology CO., LTD.
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