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HVC374B

Description
22.75 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size20KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HVC374B Overview

22.75 pF, SILICON, VARIABLE CAPACITANCE DIODE

HVC374B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeSC-79
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance5.49%
Minimum diode capacitance ratio1.68
Nominal diode capacitance22.75 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
HVC374B
Variable Capacitance Diode for VCO
ADE-208-621(Z)
Rev 0
Jun. 1998
Features
High capacitance ratio and good C-V linearity.
To be usable at low voltage.
Ultra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No.
HVC374B
Laser Mark
B6
Package Code
UFP
Outline
Cathode mark
Mark
1
B6
2
1. Cathode
2. Anode
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