HY62V8200B Series
256Kx8bit CMOS SRAM
Document Title
256K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No
03
History
Initial Revision History Insert
Revised
- Improved operating current
Icc1 : 60mA -> 35mA
Change the Notch Location of sTSOP
- Left-Top => Left-Center
Marking Information Add
Revised
- AC Test Condition Add : 5pF Test Load
Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
Draft Date
Jul.29.2000
Remark
Final
04
Sep.04.2000
Final
05
Dec.04.2000
Final
06
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 06 / Apr. 2001
Hynix Semiconductor
Y62V8200B Series
DESCRIPTION
The HY62V8200B is a high speed, low power and
2M bit CMOS SRAM organized as 262,144 words
by 8bit. The HY62V8200B uses high performance
CMOS process technology and designed for high
speed low power circuit technology. It is
particularly well suited for used in high density low
power system application. This device has a data
retention mode that guarantees data to remain
valid at a minimum power supply voltage of 2.0V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup( LL-part )
-. 2.0V(min) data retention
Standard pin configuration
-. 32-sTSOPI-8X13.4, 32-TSOPI -8X20
(Standard and Reversed)
Product
Voltage
Speed
Operation
No.
(V)
(ns)
Current/Icc(mA)
HY62V8200B
3.0~3.6
70/85/100
5
HY62V8200B-E 3.0~3.6
70/85/100
5
HY62V8200B-I
3.0~3.6
70/85/100
5
Note 1. Blank : Commercial, E : Extended, I : Industrial
2. Current value is max.
Standby
Current(uA)
25
25
25
Temperature
(°C)
0~70
-25~85(E)
-40~85(I)
PIN CONNECTION
A11
A9
A8
A13
/WE
CS2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
A11
A9
A8
A13
/WE
CS2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
TSOP-I
(Standard)
sTSOP-I
(Standard)
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
A0 ~ A17
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Input
Data Input/Output
Power(3.0V~3.6V)
Ground
BLOCK DIAGRAM
A0
ROW
DECODER
SENSE AMP
ADD INPUT BUFFER
I/O1
COLUMNDECODER
DATA I/O
BUFFER
MEMORY ARRAY
256K x 8
WRITE DRIVER
A17
I/O8
/CS1
CS2
/WE
/OE
CONTROL
LOGIC
Rev 06 / Apr. 2001
2
Y62V8200B Series
ORDERING INFORMATION
Part No.
Speed
Power
Temp.
HY62V8200BLLT1
70/85/100
LL-part
HY62V8200BLLR1
70/85/100
LL-part
HY62V8200BLLST
70/85/100
LL-part
HY62V8200BLLSR
70/85/100
LL-part
HY62V8200BLLT1-E
70/85/100
LL-part
E
HY62V8200BLLR1-E
70/85/100
LL-part
E
HY62V8200BLLST-E
70/85/100
LL-part
E
HY62V8200BLLSR-E
70/85/100
LL-part
E
HY62V8200BLLT1-I
70/85/100
LL-part
I
HY62V8200BLLR1-I
70/85/100
LL-part
I
HY62V8200BLLST-I
70/85/100
LL-part
I
HY62V8200BLLSR-I
70/85/100
LL-part
I
Note 1. Blank : Commercial, E : Extended, I : Industrial
Package
TSOPI(Standard)
TSOPI(Reversed)
Smaller TSOPI(Standard)
Smaller TSOPI(Reversed)
TSOPI(Standard)
TSOPI(Reversed)
Smaller TSOPI(Standard)
Smaller TSOPI(Reversed)
TSOPI(Standard)
TSOPI(Reversed)
Smaller TSOPI(Standard)
Smaller TSOPI(Reversed)
ABSOLUTE MAXIMUM RATING (1)
Symbol
V
IN,
V
OUT
V
CC
T
A
Parameter
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to
Vss
Operating Temperature
Rating
-0.2 to 3.9
-0.2 to 4.0
0 to 70
-25 to 85
-40 to 85
-55 to 150
1.0
50
260
•
5
Unit
V
V
°C
°C
°C
°C
W
mA
°C•sec
Remark
HY62V8200B
HY62V8200B-E
HY62V8200B-I
T
STG
Storage Temperature
P
D
Power Dissipation
I
OUT
Data Output Current
T
SOLDER
Lead Soldering Temperature & Time
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1
H
X
L
L
L
CS2
X
L
H
H
H
/WE
X
X
H
H
L
/OE
X
X
H
L
X
Mode
Deselected
Deselected
Output Disabled
Read
Write
I/O
High-Z
High-Z
High-Z
Dout
D
IN
Power
Standby
Standby
Active
Active
Active
Note :
1. H=V
IH
, L=V
IL
, X=don't care(V
IH
or
V
IL
)
Rev 06 / Apr. 2001
2
Y62V8200B Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.2
-0.3
(1)
Typ.
3.3
0
-
-
Max.
3.6
0
Vcc+0.3
0.4
Unit
V
V
V
V
Note
V
IL
= -1.5V for pulse width less than 30ns
DC ELCTRICAL CHARACTERISTICS
Vcc= 3.0~3.6V, T
A
= 0°C to 70°C/ -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified
Sym.
Parameter
Test Condition
Min.
Typ.
Max.
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS1 = V
IH
or
-1
-
1
CS2 = V
IL
or
/
OE
=
V
IH
or /WE =
V
IL
Icc
Operating Power Supply
/CS1 = V
IL
, CS2 = V
IH,
-
-
5
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
-
-
35
I
CC1
Average Operating
Min Duty Cycle = 100%
,
Current
/CS1 = V
IL
CS2 = V
IH
V
IN
= V
IH
or V
IL
Cycle time = 1us, I
I/O =
0mA,
-
-
6
/CS1 < 0.2V, CS2 > Vcc - 0.2V
V
IN
< 0.2V or V
IN
> Vcc – 0.2V
I
SB
TTL Standby Current
/CS1 = V
IH
or CS2 = V
IL
-
-
0.5
(TTL Input)
V
IN
= V
IH
or V
IL
/CS1 > Vcc - 0.2V or CS2 < 0.2V, -
I
SB1
Standby
HY62V8200B
-
25
Current
HY62V8200B-E V
IN
> Vcc - 0.2V or
-
-
25
(CMOS Input) HY62V8200B-I
V
IN
< Vss + 0.2V
-
-
25
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
OH
Output High Voltage
I
OH =
-1.0mA
2.2
-
-
Note : Typical values are at Vcc = 3.3V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
mA
uA
uA
uA
V
V
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev 06 / Apr. 2001
3
Y62V8200B Series
AC CHARACTERISTICS
Vcc= 3.0V~3.6V, T
A
= 0°C to 70°C/ -25°C to 85°C(E)/ -40°C to 85°C(I), unless otherwise specified
-70
-85
-10
# Symbol
Parameter
Min.
Max. Min. Max. Min. Max.
READ CYCLE
1
tRC
Read Cycle Time
70
-
85
-
100
-
2
tAA
Address Access Time
-
70
-
85
-
100
3
tACS
Chip Select Access Time
-
70
-
85
-
100
4
tOE
Output Enable to Output Valid
-
40
-
45
-
50
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
7
tCHZ
Chip Deselection to Output in High Z
0
20
0
25
0
30
8
tOHZ
Out Disable to Output in High Z
0
20
0
25
0
30
9
tOH
Output Hold from Address Change
15
-
15
-
15
-
WRITE CYCLE
10 tWC
Write Cycle Time
70
-
85
-
100
-
11 tCW
Chip Selection to End of Write
60
-
70
-
80
-
12 tAW
Address Valid to End of Write
60
-
70
-
80
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
50
-
60
-
70
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
20
0
25
0
30
17 tDW
Data to Write Time Overlap
30
-
35
-
40
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
5
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C / -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
Others
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : 1 Including jig and scope capacitance
Rev 06 / Apr. 2001
4
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