VISHAY
BPW17N
Vishay Semiconductors
Silicon NPN Phototransistor
Description
BPW17N is a silicon NPN epitaxial planar phototrans-
istor in a miniature plastic case with a ± 12 ° lens.
With a lead center to center spacing of 2.54 mm and
a package width of 2.4 mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
94 8639
Features
• Miniature T-¾ clear plastic package with lens
• Narrow viewing angle
ϕ
= ± 12 °
• Insensitive against background light due to narrow
aperture
• Suitable for 0.1\" (2.54 mm) center to center spac-
ing
• Suitable for visible and near infrared radiation
• Compatible with IR diode CQY37N
• Lead-free device
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
≤
3s
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
55 °C
Test condition
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
50
100
100
100
- 55 to + 100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Emitter Breakdown
Voltage
Collector-emitter dark current
Collector-emitter capacitance
Test condition
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
Symbol
V
(BR)CEO
I
CEO
C
CEO
Min
32
1
8
200
Typ.
Max
Unit
V
nA
pF
Document Number 81516
Rev. 1.3, 26-Mar-04
www.vishay.com
1
BPW17N
Vishay Semiconductors
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Cut-Off Frequency
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
Test condition
E
e
= 1 mW/cm ,
λ
= 950 nm,
V
CE
= 5 V
2
VISHAY
Symbol
I
ca
ϕ
λ
p
λ
0.5
V
CEsat
t
on
t
off
f
c
Min
0.5
Typ.
1.0
± 12
825
620 to 960
Max
Unit
mA
deg
nm
nm
0.3
4.8
5.0
120
V
µs
µs
kHz
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
P
tot
–Total Power Dissipation ( mW )
125
I
ca rel
- Relative Collector Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
94 8239
100
75
R
thJA
50
25
0
V
CE
= 5 V
E
e
= 1 mW/cm
2
λ
ı
= 950 nm
0
20
40
60
80
100
0
20
40
60
80
100
94 8308
T
amb
– Ambient Temperature ( °C )
T
amb
- Ambient Temperature (
°
C )
Fig. 1 Total Power Dissipation vs. Ambient Temperature
Fig. 3 Relative Collector Current vs. Ambient Temperature
I
CEO
– Collector Dark Current ( nA)
10
3
V
CE
= 20 V
I
ca
– Collector Light Current ( mA)
10
4
10
1
10
2
0.1
V
CE
= 5 V
λ
= 950 nm
10
1
0.01
10
0
94 8235
20
40
60
80
100
0.001
0.01
94 8313
0.1
1
2
10
T
amb
– Ambient T
emperature ( °C )
E
e
– Irradiance ( mW/ cm )
Fig. 2 Collector Dark Current vs. Ambient Temperature
Fig. 4 Collector Light Current vs. Irradiance
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2
Document Number 81516
Rev. 1.3, 26-Mar-04
VISHAY
BPW17N
Vishay Semiconductors
S (
λ
)
rel
– Relative Spectral Sensitivity
I
ca
– Collector Light Current ( mA)
10
1.0
0.8
0.6
0.4
0.2
0
400
λ
= 950 nm
1
E
e
=1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1
0.1
94 8242
1
10
100
600
800
1000
V
CE
– Collector Emitter Voltage ( V )
94 8241
λ
– Wavelength ( nm )
Fig. 5 Collector Light Current vs. Collector Emitter Voltage
Fig. 8 Relative Spectral Sensitivity vs. Wavelength
C
CEO
– Collector Emitter Capacitance ( pF
20
16
12
8
4
0
0.1
1
10
100
94 8243
0
°
f = 1 MHz
10
°
20
°
30°
S
rel
- Relative Sensitivity
1.0
0.9
0.8
0.7
40°
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8240
V
CE
– Collector Emitter Voltage ( V )
Fig. 6 Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 Relative Radiant Sensitivity vs. Angular Displacement
t
on
/ t
off
–Turn on / Turn off Time (
µs
)
12
10
8
6
4
2
0
t
off
t
on
V
CE
= 5 V
R
L
= 100
Ω
λ
= 950 nm
0
4
8
12
16
94 8238
I
C
– Collector Current ( mA )
Fig. 7 Turn On/Turn Off Time vs. Collector Current
Document Number 81516
Rev. 1.3, 26-Mar-04
www.vishay.com
3
BPW17N
Vishay Semiconductors
Package Dimensions in mm
VISHAY
96 12187
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4
Document Number 81516
Rev. 1.3, 26-Mar-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
BPW17N
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81516
Rev. 1.3, 26-Mar-04
www.vishay.com
5
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