DATA SHEET
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4813 is a power transistor developed for high-speed switching and features high h
FE
and low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low V
CE(sat)
: V
CE(sat)
≤
0.3 V
• High h
FE
:
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
@I
C
= 3.0 A, I
B
= 30 mA
h
FE
= 450 to 2,000 @V
CE
= 2.0 V, I
C
= 3.0 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
Ta = 25°C
PW
≤
10 ms, duty cycle
≤
2%
Conditions
Ratings
100
100
7.0
±7.5
±10
2.0
1.8
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4813
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
Diode order voltage
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
*
V
CE(sat)1
*
V
CE(sat)2
*
V
CE(sat)3
*
V
CE(sat)4
*
V
BE(sat)
*
f
T
C
ob
t
on
t
stg
t
f
V
DF
I
DF
= 5.0 A
Conditions
V
CB
= 100 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 3.0 A
V
CE
= 2.0 V, I
C
= 5.0 A
I
C
= 3.0 A, I
B
= 60 mA
I
C
= 3.0 A, I
B
= 30 mA
I
C
= 5.0 A, I
B
= 100 mA
I
C
= 5.0 A, I
B
= 50 mA
I
C
= 5.0 A, I
B
= 50 mA
V
CE
= 5.0 V, I
C
= 1.0 A
V
CB
= 10 V, I
E
= 0 , f = 1 MHz
I
C
= 5.0 A, I
B1
=
−I
B2
= 100 mA
R
L
= 3.0
Ω,
V
CC
≅
16 V
150
110
0.5
2.0
0.5
1.4
450
150
0.1
0.15
0.2
0.3
0.4
0.55
1.2
MIN.
TYP.
MAX.
10
17
2,000
Unit
µ
A
mA
−
−
V
V
V
V
V
MHz
pF
µ
s
µ
s
µ
s
V
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base 2. Collector 3. Emitter
0.7 MAX.
EQUIVALENT CIRCUIT
2
Data Sheet D15603EJ2V0DS
2SC4813
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Ambient Temperature Ta (°C)
I
C
Derating dT (%)
Ambient Temperature Ta (°C)
Single pulse
Transient Thermal Resistance r
th(j-a)
(t) (°C/W)
Collector Current I
C
(A)
Single pulse
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (s)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
DC Current Gain h
FE
Collector Current I
C
(A)
Data Sheet D15603EJ2V0DS
3
京公网安备 11010802033920号
EEWORLD
