8550S
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55
±0.2
PNP
Silicon
General Purpose Transistor
TO-92
3.5
±0.2
4.5
±0.2
FEATURES
Power dissipation
P
CM:
Collector current
I
CM:
- 0.5
A
0.625 W (Tamb=25
C)
14.3
±0.2
0.46
+0.1
–0.1
0.43
+0.08
–0.07
Collector-base voltage
V
(BR)CBO
: - 40
V
(1.27
Typ.)
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +
150 C
1 2 3
1.25
–0.2
+0.2
1: Emitter
2: Collector
3: Base
2.54
±0.1
ELECTRICAL CHARACTERISTICS (Tamb=
25 C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
unless otherwise specified)
Test
conditions
MIN
-40
-25
-5
-0.1
-0.1
-0.1
85
50
-0.6
-1.2
V
V
300
TYP
MAX
UNIT
V
V
V
Ic= -100
µA
, I
E
=0
Ic= -0.1 mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -20V, I
B
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -500mA
I
C
=-500mA, I
B
=-50 mA
I
C
=-500mA, I
B
=-50 mA
V
CE
=-6 V, IC=-20mA
µ
A
µ
A
µ
A
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
B
85-160
C
120-200
D
160-300
Any changing of specification will not be informed individual
Page 1 of 2
8550S
Elektronische Bauelemente
PNP
Silicon
General Purpose Transistor
Typical Characteristics
-0.5
1000
V
CE
= -1V
I
B
=-4.0mA
I
C
[mA], COLLECTOR CURRENT
-0.4
I
B
=-3.5mA
I
B
=-3.0mA
h
FE
, DC CURRENT GAIN
100
-0.3
I
B
=-2.5mA
I
B
=-2.0mA
-0.2
I
B
=-1.5mA
I
B
=-1.0mA
10
-0.1
I
B
=-0.5mA
-0.4
-0.8
-1.2
-1.6
-2.0
1
-0.1
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10000
-100
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
=10I
B
V
CE
= -1V
-1000
I
C
[mA], COLLECTOR CURRENT
-100
-1000
-10
V
BE(sat)
-100
-1
V
CE(sat)
-10
-0.1
-1
-10
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
f=1MHz
I
E
=0
V
CE
=-10V
C
ob
[pF], CAPACITANCE
10
100
1
-1
-10
-100
-1000
10
-1
-10
-100
-1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
2
of
2
Power technology
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