ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
IXUC200N055
V
DSS
= 55 V
I
D25
= 200 A
R
DS(on)
= 5.1 mW
ISOPLUS 220
TM
Symbol
V
DSS
V
GS
I
D25
I
D90
I
S25
I
S90
I
D(RMS)
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
Continuous
T
C
= 25°C; Note 1
T
C
= 90°C, Note 1
T
C
= 25°C; Note 1, 2
T
C
= 90°C, Note 1, 2
Package lead current limit
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
55
±20
200
V
V
A
A
A
A
A
mJ
W
°C
°C
°C
°C
V~
G = Gate,
S = Source
* Patent pending
G
D
S
Isolated back surface*
D = Drain,
e-
ou
140
45
500
300
175
300
2500
3
4.0
2
T
J
= 25°C
T
J
= 125°C
0.2
t
160
200
-55 ... +175
-55 ... +150
4
20
±200
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Trench MOSFET
- very low R
DS(on)
- fast switching
- usable intrinsic reverse diode
l
Low drain to tab capacitance(<30pF)
l
Unclamped Inductive Switching (UIS)
rated
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
as
11 ... 65 / 2.4 ...11 N/lb
g
Applications
Automotive 42V and 12V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l
Power supplies
- DC - DC converters
- Solar inverters
l
Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
l
ph
Symbol
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
5.1 mW
mW
V
mA
mA
nA
V
GS
= 10 V, I
D
= 100 A, Note 3
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
DS
= V
GS
, I
D
= 2 mA
V
DS
= V
DSS
V
GS
= 0 V
V
GS
=
±20
V
DC
, V
DS
= 0
Advantages
l
l
l
Easy assembly: no screws or isolation
foils required
Space savings
High power density
© 2000 IXYS All rights reserved
98761 (11/00)
IXUC200N055
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
200
V
GS
= 10 V, V
DS
= 14 V, I
D
= 100 A
44
72
35
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
,
I
D
= 50 A, R
G
= 4.7
W
115
230
155
0.5
0.30
nC
nC
nC
ns
ns
ns
ns
K/W
K/W
ISOPLUS220 OUTLINE
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCH
Symbol
V
SD
t
rr
Test Conditions
I
F
= 50 A, V
GS
= 0 V
Note 3
e-
ou
0.9
80
t
1.3
Source-Drain Diode
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
ns
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
I
F
= 150 A, di/dt = -200 A/ms, V
DS
= 30 V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t
£
300
ms,
duty cycle d
£
2 %
ph
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
as
京公网安备 11010802033920号
EEWORLD
