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HYB25D128160CE-5

Description
128 Mbit Double Data Rate SDRAM
Categorystorage    storage   
File Size3MB,85 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

HYB25D128160CE-5 Overview

128 Mbit Double Data Rate SDRAM

HYB25D128160CE-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP66,.46
Contacts66
Reach Compliance Codecompli
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
JESD-609 codee3
length22.22 mm
memory density134217728 bi
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply2.6 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.005 A
Maximum slew rate0.25 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width10.16 mm
D a t a S h e e t , Rev. 1.0, A p r . 2 0 0 4
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
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