BXY44-T1H datasheet, PDF - EEWORLD Datasheet

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BXY44-T1H: DescriptionPin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2; CategoryDiscrete semiconductor diode; File Size190KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BXY44-T1H Overview

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2

BXY44-T1H Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	O-CXMW-G2
Contacts	2
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
application	ATTENUATOR; SWITCHING
Minimum breakdown voltage	200 V
Configuration	SINGLE
Maximum diode capacitance	0.35 pF
Nominal diode capacitance	0.2 pF
Diode component materials	SILICON
Maximum diode forward resistance	5 Ω
Diode resistance test current	1 mA
Diode resistance test frequency	100 MHz
Diode type	PIN DIODE
JESD-30 code	O-CXMW-G2
JESD-609 code	e3
Minority carrier nominal lifetime	0.8 µs
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	MICROWAVE
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Guideline	ESA-SCC-5513/030
Reverse test voltage	50 V
surface mount	YES
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	UNSPECIFIED
Base Number Matches	1

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BXY44

HiRel

Silicon PIN Diode



HiRel

Discrete and Microwave

Semiconductor

Current controlled RF resistor for RF

attenuators and switches

High reverse voltage

Hermetically sealed microwave package

Space Qualified

ESA/SCC Detail Spec. No.: 5513/030

Type Variant No.s 04 to 07

ESD: Electrostatic discharge

sensitive device,

observe handling precautions!

Type

BXY44-T (ql)

BXY44-T1 (ql)

Marking

Ordering Code

see below

Pin Configuration

Package

(ql) Quality Level:

P: Professional Quality

H: High Rel Quality

S: Space Quality

ES: ESA Space Quality

(see order instructions for ordering example)

IFAG IMM RPD D HIR

1 of 5

V2, February 2011

BXY44-T1H Related Products

	BXY44-T1H	BXY44-T1S	BXY44-T1ES	BXY44-T1P	BXY44-TES	BXY44-TP
Description	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2	Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
package instruction	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CELF-R2	O-CELF-R2
Contacts	2	2	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING
Minimum breakdown voltage	200 V	200 V	200 V	200 V	200 V	200 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum diode capacitance	0.35 pF	0.35 pF	0.35 pF	0.35 pF	0.35 pF	0.35 pF
Nominal diode capacitance	0.2 pF	0.2 pF	0.2 pF	0.2 pF	0.2 pF	0.2 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum diode forward resistance	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω	5 Ω
Diode resistance test current	1 mA	1 mA	1 mA	1 mA	1 mA	1 mA
Diode resistance test frequency	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Diode type	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
JESD-30 code	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CXMW-G2	O-CELF-R2	O-CELF-R2
JESD-609 code	e3	e3	e3	e3	e3	e3
Minority carrier nominal lifetime	0.8 µs	0.8 µs	0.8 µs	0.8 µs	0.8 µs	0.8 µs
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	LONG FORM	LONG FORM
Maximum power dissipation	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030	ESA-SCC-5513/030
Reverse test voltage	50 V	50 V	50 V	50 V	50 V	50 V
surface mount	YES	YES	YES	YES	YES	YES
technology	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	WRAP AROUND	WRAP AROUND
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	END	END
Maker	Infineon	-	Infineon	Infineon	Infineon	Infineon
Base Number Matches	1	1	1	1	1	-

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