Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | R-PDSO-G3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | COMMON ANODE, 2 ELEMENTS |
| Maximum diode capacitance | 1 pF |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| Maximum forward voltage (VF) | 0.34 V |
| frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Number of components | 2 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Maximum power dissipation | 0.15 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 8 V |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal surface | MATTE TIN |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
