Preliminary
Datasheet
BCR6CM-12LB
600V - 6A - Triac
Medium Power Use
Features
I
T (RMS)
: 6 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
Non-Insulated Type
Planar Passivation Type
R07DS1027EJ0100
Rev.1.00
Feb 25, 2013
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
1
2
3
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay,
copying machine, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
6
60
15
5
0.5
10
2
– 40 to +150
– 40 to +150
2.1
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 128C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
Typical value
R07DS1027EJ0100 Rev.1.00
Feb 25, 2013
Page 1 of 7
BCR6CM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.7
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
2.5
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 9 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C,
V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C/150C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 1.
2.
3.
4.
5.
6.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm away from the molded case.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 3.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS1027EJ0100 Rev.1.00
Feb 25, 2013
Page 2 of 7
BCR6CM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
1.5
2.0
2.5
Tj = 150°C
Tj = 25°C
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
3
2
V
GM
= 10V P
G(AV)
= 0.5W
P
GM
= 5W
10
1
7
5
I
GM
= 2A
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
–1
7
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.1V
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
Gate Voltage (V)
I
RGT III
I
FGT I
I
RGT I
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1027EJ0100 Rev.1.00
Feb 25, 2013
Page 3 of 7
BCR6CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
20
On-State Power Dissipation (W)
18
16
Case Temperature (°C)
360° Conduction
14
Resistive,
12
inductive loads
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9 10
120
Curves apply regardless
of conduction angle
100
80
60
40
360° Conduction
20
Resistive,
inductive loads
0
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
120
100
80
60
×
60
×
t2.3
Ambient Temperature (°C)
140
120
×
120
×
t2.3
100
×
100
×
t2.3
140
120
100
80
60
40
20
0
0
0.5
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
60
All fins are black painted
aluminum and greased
40
Curves apply regardless
of conduction angle
20
Resistive, inductive loads
Natural convection
0
2
3
4
5
0
1
6
7
8
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Typical Example
Typical Example
10
5
10
4
10
2
7
5
4
3
2
10
3
10
2
–60 –40 –20 0 20 40 60 80 100 120 140 160
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1027EJ0100 Rev.1.00
Feb 25, 2013
Page 4 of 7
BCR6CM-12LB
Latching Current vs.
Junction Temperature
10
3
7
5
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Latching Current (mA)
3
2
Distribution
T
2
+, G–
Typical Example
10
2
7
5
3
2
10
1
7
5
3
2
T
2
+, G+
Typical Example
T
2
–, G–
10
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Typical Example
Tj = 125°C
Typical Example
Tj = 150°C
III Quadrant
III Quadrant
I Quadrant
I Quadrant
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
3
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
7
5
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
1
7
Minimum
5
Characteristics
3
2
Value
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
7
5
3
2
10
1
7
5
3
2
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
I Quadrant
III Quadrant
I Quadrant
Minimum
Characteristics
Value
III Quadrant
10
0
7
0
10
2 3
5 7 10
1
2 3
5 7 10
2
10
0
7
0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1027EJ0100 Rev.1.00
Feb 25, 2013
Page 5 of 7
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