BAS32L
High-speed switching diode
Rev. 06 — 29 October 2008
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features
I
I
I
I
I
High switching speed: t
rr
≤
4 ns
Reverse voltage: V
R
≤
75 V
Repetitive peak reverse voltage: V
RRM
≤
100 V
Repetitive peak forward current: I
FRM
≤
450 mA
Small hermetically sealed glass SMD package
1.3 Applications
I
High-speed switching
I
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F
I
FRM
V
R
V
F
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
repetitive peak forward
current
reverse voltage
forward voltage
reverse recovery time
I
F
= 100 mA
[2]
Conditions
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
200
450
75
1000
4
Unit
mA
mA
V
mV
ns
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAS32L
High-speed switching diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
k
a
1
2
006aab040
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS32L
-
Description
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
Type number
4. Marking
Table 4.
BAS32L
[1]
black: made in Philippines
brown: made in China
Marking codes
Marking code
[1]
marking band
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
total power dissipation
T
amb
= 25
°C
[1]
[2]
[1]
Conditions
Min
-
-
-
-
Max
100
75
200
450
Unit
V
V
mA
mA
-
-
-
-
4
1
0.5
500
A
A
A
mW
BAS32L_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 29 October 2008
2 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
200
+200
+200
Unit
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
= 25
°C
prior to surge.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
350
300
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 5 mA
I
F
= 100 mA
I
F
= 100 mA; T
j
= 100
°C
I
R
reverse current
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Min
620
-
-
-
-
-
-
-
[1]
Typ
-
-
-
-
-
-
-
-
-
-
Max
750
1000
930
25
5
50
100
2
4
2.5
Unit
mV
mV
mV
nA
µA
µA
µA
pF
ns
V
diode capacitance
reverse recovery
time
forward recovery
voltage
V
R
= 0 V; f = 1 MHz
-
-
[2]
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 50 mA; t
r
= 20 ns.
BAS32L_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 29 October 2008
3 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
300
I
F
(mA)
200
mbg451
600
I
F
(mA)
mbg464
400
(1)
(2)
(3)
100
200
0
0
100
T
amb
(°C)
200
0
0
1
V
F
(V)
2
FR4 PCB, standard footprint
(1) T
j
= 175
°C;
typical values
(2) T
j
= 25
°C;
typical values
(3) T
j
= 25
°C;
maximum values
Fig 1.
Forward current as a function of ambient
temperature; derating curve
mbg704
Fig 2.
Forward current as a function of forward
voltage
10
3
mgd006
10
2
I
FSM
(A)
10
I
R
(µA)
10
2
(1)
(2)
(3)
10
1
1
10
−1
10
−1
1
10
10
2
10
3
t
p
(µs)
10
4
10
−2
0
100
T
j
(
°
C)
200
Based on square wave currents.
T
j
= 25
°C
prior to surge
(1) V
R
= 75 V; maximum values
(2) V
R
= 75 V; typical values
(3) V
R
= 20 V; typical values
Fig 3.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
Fig 4.
Reverse current as a function of junction
temperature
BAS32L_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 29 October 2008
4 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
1.2
C
d
(pF)
1.0
mgd004
0.8
0.6
0.4
0
10
V
R
(V)
20
f = 1 MHz; T
j
= 25
°C
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
Input signal: Reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
δ ≤
0.05
Oscilloscope: Rise time t
r
= 0.35 ns
(1) I
R
= 1 mA
Fig 6.
Reverse recovery time test circuit and waveforms
I
1 kΩ
450
Ω
I
90 %
V
R
S
= 50
Ω
D.U.T.
OSCILLOSCOPE
R
i
= 50
Ω
10 %
t
t
r
t
p
input signal
VFR
t
output signal
mga882
Input signal: Forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥
100 ns; duty factor
δ ≤
0.005
Fig 7.
BAS32L_6
Forward recovery voltage test circuit and waveforms
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 29 October 2008
5 of 10
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