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HYB3164165ATL-60

Description
4M x 16-Bit Dynamic RAM
Categorystorage    storage   
File Size294KB,29 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

HYB3164165ATL-60 Overview

4M x 16-Bit Dynamic RAM

HYB3164165ATL-60 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
Spare memory width8
JESD-30 codeR-PDSO-G50
memory density67108864 bi
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal locationDUAL
4M x 16-Bit Dynamic RAM
(8k, 4k & 2k Refresh, EDO-Version)
Advanced Information
HYB 3164165AT(L) -40/-50/-60
HYB 3165165AT(L) -40/-50/-60
HYB 3166165AT(L) -40/-50/-60
4 194 304 words by 16-bit organization
0 to 70 °C operating temperature
Hyper Page Mode - EDO - operation
Performance:
-40
t
RAC
t
CAC
t
AA
t
RC
t
HPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
-50
50
13
25
84
20
-60
60
15
30
104
25
ns
ns
ns
ns
ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
-40
HYB3166165AT(L)
HYB3165165AT(L)
HYB3164165AT(L)
1008
756
612
-50
612
504
324
-60
450
360
324
mW
mW
mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720
µA
standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and Self Refresh (L-version only
2 CAS / 1 WE byte control
8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165AT)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165AT)
2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165AT)
256ms refresh period for L-versions
Plastic Package:
P-TSOPII-50 400 mil
Semiconductor Group
1
6.97
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