HYB3164400AT-50 datasheet, PDF

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HYB3164400AT-50: Description16M x 4-Bit Dynamic RAM; Categorystorage storage; File Size255KB，26 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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HYB3164400AT-50 Overview

16M x 4-Bit Dynamic RAM

HYB3164400AT-50 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code	R-PDSO-G32
memory density	67108864 bi
Memory IC Type	FAST PAGE DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	32
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
refresh cycle	8192
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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16M x 4-Bit Dynamic RAM

(4k & 8k Refresh)

HYB 3164400AJ/AT(L) -40/-50/-60

HYB 3165400AJ/AT(L) -40/-50/-60

Advanced Information

•

16 777 216 words by 4-bit organization

0 to 70 °C operating temperature

Fast Page Mode operation

Performance:

-40

RAC

CAC

RAS access time

CAS access time

Access time from address

Read/write cycle time

Fast page mode cycle time

-50

-60

110

•

Single + 3.3 V (± 0.3V) power supply

Low power dissipation:

max. 396 mW active ( HYB 3164400AJ/AT(L) -40)

max. 324 mW active ( HYB 3164400AJ/AT(L) -50)

max. 270 mW active ( HYB 3164400AJ/AT(L) -60)

max. 558 mW active ( HYB 3165400AJ/AT(L) -40)

max. 468 mW active ( HYB 3165400AJ/AT(L) -50)

max. 378 mW active ( HYB 3165400AJ/AT(L) -60)

7.2 mW standby (LVTTL)

3.24 mW standby (LVCMOS)

720

µW

standby for L-versions

Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh (L-version only)

•

8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT)

4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)

•

256 msec refresh period for L-versions

•

Plastic Package

P-SOJ-32-1

400 mil

P-TSOPII-32-1 400 mil

HYB 3164(5)400AJ

HYB 3164(5)400AT

Semiconductor Group

6.97

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