16M x 4-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164405J/T(L) -50/-60
HYB 3165405J/T(L) -50/-60
Preliminary Information
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16 777 216 words by 4-bit organization
0 to 70 ˚C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
84 ns (-50 version)
104 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
Hyper page mode (EDO) cycle time
20 ns (-50 version)
25 ns (-60 version)
Single + 3.3 V (± 0.3V) power supply
Low power dissipation
max. 396 active mW ( HYB 3164405J/T(L)-50)
max. 360 active mW ( HYB 3164405J/T(L)-60)
max. 504 active mW ( HYB 3165405J/T(L)-50)
max. 432 active mW ( HYB 3165405J/T(L)-60)
7.2 mW standby (TTL)
720 W standby (MOS)
14.4 mW Self Refresh (L-version only)
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
Hyper page mode (EDO) capability
8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405J/T(L))
4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405J/T(L))
Plastic Package:
P-SOJ-34-1
500 mil
HYB 3164(5)400J
P-TSOPII-34-1 500 mil
HYB 3164(5)400T
Semiconductor Group
89
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
This HYB3164(5)405 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is
fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)405 operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)400J/T to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)405TL parts have a very low power „sleep mode“
supported by Self Refresh.
Ordering Information
Type
HYB 3164405J-50
HYB 3164405J-60
HYB 3164405T-50
HYB 3164405T-60
Ordering
Code
on request
on request
on request
on request
Package
P-SOJ-34-1
P-SOJ-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-SOJ-34-1
P-SOJ-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
P-TSOPII-34-1
Descriptions
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
500 mil DRAM (access time 50 ns)
500 mil DRAM (access time 60 ns)
HYB 3164405TL-50 on request
HYB 3164405TL-60 on request
HYB 3165405J-50
HYB 3165405J-60
HYB 3165405T-50
HYB 3165405T-60
on request
on request
on request
on request
HYB 3165405TL-50 on request
HYB 3165405TL-60 on request
Pin Names
A0-A12
A0-A11
RAS
OE
I/O1-I/O4
CAS
WRITE
Vcc
Vss
Address Inputs for HYB 3164405J/T(L)
Address Inputs for HYB 3165405J/T(L)
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
90
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