V58C2256404SCLT5B datasheet, PDF

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V58C2256404SCLT5B: DescriptionDDR DRAM, 64MX4, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, MS-024FC, TSOP2-66; Categorystorage storage; File Size920KB，61 Pages; ManufacturerProMOS Technologies Inc

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V58C2256404SCLT5B Overview

DDR DRAM, 64MX4, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, MS-024FC, TSOP2-66

V58C2256404SCLT5B Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ProMOS Technologies Inc
Parts packaging code	TSSOP2
package instruction	TSSOP, TSSOP66,.46
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.65 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
length	22.22 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	66
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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V58C2256(804/404/164)SC

HIGH PERFORMANCE 256 Mbit DDR SDRAM

4 BANKS X 8Mbit X 8 (804)

4 BANKS X 4Mbit X 16 (164)

4 BANKS X 16Mbit X 4 (404)

DDR440

Clock Cycle Time (t

CK2

)

Clock Cycle Time (t

CK2.5

)

Clock Cycle Time (t

CK3

)

System Frequency (f

CK max

)

5ns

4.5ns

220 MHz

DDR400

5ns

200 MHz

DDR400

7.5ns

5ns

200 MHz

DDR400

7.5ns

6ns

5ns

200 MHz

DDR333

7.5ns

6ns

166 MHz

DDR266

7.5ns

7ns

143 MHz

Features

■

High speed data transfer rates with system frequency

up to 220 MHz

■

Data Mask for Write Control

■

Four Banks controlled by BA0 & BA1

■

Programmable CAS Latency: 2, 2.5, 3

■

Programmable Wrap Sequence: Sequential

or Interleave

■

Programmable Burst Length:

2, 4, 8 for Sequential Type

2, 4, 8 for Interleave Type

■

Automatic and Controlled Precharge Command

■

Power Down Mode

■

Auto Refresh and Self Refresh

■

Refresh Interval: 8192 cycles/64 ms

■

Available in 66-pin 400 mil TSOP or 60 Ball FBGA

■

SSTL-2 Compatible I/Os

■

Double Data Rate (DDR)

■

Bidirectional Data Strobe (DQS) for input and output

data, active on both edges

■

On-Chip DLL aligns DQ and DQs transitions with CK

transitions

■

Differential clock inputs CK and CK

■

Power Supply 2.5V ± 0.2V

■

Power Supply 2.6V ± 0.1V for DDR400 & DDR440

■

tRAS lockout supported

■

Concurrent auto precharge option is supported

*Note: (-45) Supports PC3600 module with 2.5-3-3 timing

(-5D) Supports PC3200 module with 2-3-3 timing

(-5B) Supports PC3200 module with 2.5-3-3 timing

(-5) Supports PC3200 module with 3-3-3 timing

(-6) Supports PC2700 module with 2.5-3-3 timing

(-7) Supports PC2100 module with 2-2-2 timing

Description

The V58C2256(804/404/164)SC is a four bank DDR

DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x

4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404). The

V58C2256(804/404/164)SC achieves high speed data

transfer rates by employing a chip architecture that

prefetches multiple bits and then synchronizes the output

data to a system clock.

All of the control, address, circuits are synchronized

with the positive edge of an externally supplied clock. I/O

transactions are occurring on both edges of DQS.

Operating the four memory banks in an interleaved

fashion allows random access operation to occur at a

higher rate than is possible with standard DRAMs. A se-

quential and gapless data rate is possible depending on

burst length, CAS latency and speed grade of the device.

Device Usage Chart

Operating

Temperature

Range

0°C to 70°C

Package Outline

JEDEC 66 TSOP II

60 FBGA

•

CK Cycle Time (ns)

-45

•

Power

-6

•

-5D

•

-5B

•

-5

•

-7

•

Std.

•

Temperature

Mark

Blank

V58C2256(804/404/164)SC Rev.2.4 May 2006

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