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BD137-10

Description
TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-225AA
CategoryDiscrete semiconductor    The transistor   
File Size50KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BD137-10 Overview

TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-225AA

BD137-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)63
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)13 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)250 MHz
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12

BD137-10 Related Products

BD137-10 BD137-16
Description TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-225AA TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-225AA
Is it Rohs certified? incompatible incompatible
Maker NXP NXP
Reach Compliance Code unknown unknown
Maximum collector current (IC) 1.5 A 1.5 A
Configuration Single Single
Minimum DC current gain (hFE) 63 100
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 13 W 13 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 250 MHz 250 MHz
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