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FM25L16B-GATR

Description
Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
Categorystorage    storage   
File Size144KB,13 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Download Datasheet Parametric Compare View All

FM25L16B-GATR Overview

Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25L16B-GATR Parametric

Parameter NameAttribute value
MakerRamtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codeunknown
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density16384 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count2048 words
character code2000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm
Base Number Matches1
Preliminary
AEC Q100 Grade 1 Compliant
FM25L16B
– Automotive Temp.
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance 100 Trillion (10
13
) Read/Writes
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Serial Peripheral Interface - SPI
Up to 15 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 3.0-3.6V
6
µA
Standby Current (+85C)
Industry Standard Configuration
Automotive Temperature -40°C to +125°C
o
Qualified to AEC Q100 Specification
8-pin “Green”/RoHS SOIC Package
Description
The FM25L16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25L16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L16B is capable of supporting 10
13
read/write cycles, or 10 million times more write
cycles than EEPROM.
These capabilities make the FM25L16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16B provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L16B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an automotive
temperature range of -40°C to +125°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L16B-GA
FM25L16B-GATR
“Green”/RoHS 8-pin SOIC,
Automotive Grade 1
“Green”/RoHS 8-pin SOIC,
Automotive Grade 1,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.0
Feb. 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 13

FM25L16B-GATR Related Products

FM25L16B-GATR FM25L16B-GA
Description Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
Maker Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code SOIC SOIC
package instruction SOP, SOP,
Contacts 8 8
Reach Compliance Code unknown unknown
JESD-30 code R-PDSO-G8 R-PDSO-G8
length 4.9 mm 4.9 mm
memory density 16384 bit 16384 bit
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT
memory width 8 8
Number of functions 1 1
Number of terminals 8 8
word count 2048 words 2048 words
character code 2000 2000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
organize 2KX8 2KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified
Maximum seat height 1.75 mm 1.75 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE
Terminal form GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
width 3.9 mm 3.9 mm
Base Number Matches 1 1
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