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BZT52B3V3-V-G

Description
DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size108KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

BZT52B3V3-V-G Overview

DIODE 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode

BZT52B3V3-V-G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance2.12%
Working test current5 mA
Base Number Matches1
BZT52-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common
cathode configuration in the SOT-23 case with
type designation DZ23 series.
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD-123
Weight:
approx. 9.4 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current see table
" Characteristics "
Power dissipation
Power dissipation
1)
2)
Test condition
Symbol
Value
Unit
P
tot
P
tot
500
2)
410
1)
mW
mW
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
J
T
S
Value
300
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 83340
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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