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3SK253-U1G-A

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size47KB,6 Pages
ManufacturerNEC Electronics
Environmental Compliance
Download Datasheet Parametric Compare View All

3SK253-U1G-A Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

3SK253-U1G-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee6
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)15 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low V
DD
Use
• Driving Battery
:
(V
DS
= 3.5 V)
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 18.0 dB TYP. (f = 900 MHz)
Embossed Type Taping
2.9±0.2
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.1
2
3
0.4
+0.1
– 0.05
4
0.4
+0.1
– 0.05
0.95
• Low Noise Figure :
• High Power Gain :
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting :
• Package
:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
10 kΩ
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
*1
±8
*1
18
18
25
200
*2
125
–55 to +125
V
V
0.85
1
V
V
1.1
+0.2
– 0.1
V
mA
mW
°C
°C
0.8
0 to 0.1
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
©
0.16
+0.1
– 0.06
0.4
+0.1
– 0.05
0.6
+0.1
–0.05
(1.9)
1993

3SK253-U1G-A Related Products

3SK253-U1G-A 3SK253-UAG-A 3SK253-UAG 3SK253-U1G
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4
Is it Rohs certified? conform to conform to incompatible incompatible
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.025 A 0.025 A 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.03 pF 0.03 pF 0.03 pF 0.03 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e6 e6 e0 e0
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 15 dB 15 dB 15 dB 15 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN BISMUTH TIN BISMUTH TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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