HYS 64/72V64220GU
SDRAM-Modules
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules
168-pin Unbuffered DIMM Modules
• 168-pin unbuffered 8 Byte Dual-In-Line
SDRAM Modules for PC main memory
applications using 256Mbit technology.
• PC100-222, PC133-333 & PC133-222
versions
• Two bank 64M
×
64 and 64M
×
72
organization
• Optimized for byte-write non-parity and ECC
applications
• JEDEC standard Synchronous DRAMs
(SDRAM)
• Programmed Latencies:
Product Speed
-7
-7.5
-8
PC133
PC133
PC100
CL
2
3
2
t
RCD
t
RP
• Single + 3.3 V (
±
0.3 V) power supply
• Programmable CAS Latency, Burst Length,
and Wrap Sequence (Sequential &
Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs and outputs are LVTTL compatible
• Serial Presence Detect with E
2
PROM
• Uses Infineon 256 Mbit SDRAM components
in 32M
×
8 organization and TSOPII-54
packages
• Fully PC board layout compatible to INTEL’s
Rev. 1.0 module specification
• Gold contact pad, card size:
133.35 mm
×
31.75 mm
×
4.00 mm
(JEDEC MO-161-BA)
2
3
2
2
3
2
• SDRAM Performance:
-7
PC133
f
CK
t
AC
-7.5
PC133
133
5.4
-8
PC100
100
6
Unit
MHz
ns
Clock Frequency (max.)
Clock Access time
133
5.4
Description
The HYS 64V64220GU and HYS 72V64220GU are industry standard 168-pin 8-byte Dual in-line
Memory Modules (DIMMs) which are organized as 64M
×
64 and 64M
×
72 in two banks high speed
memory arrays designed with 256M Synchronous DRAMs (SDRAMs) for non-parity and ECC
applications. The DIMMs use “-7” speed sorted 256 Mbit Synchronous DRAMs (SDRAMs) to meet
the PC133-222 requirements, “-7.5” for PC133-333 and “-8” components for PC100-222
applications. Decoupling capacitors are mounted on the PC board. The PC board design is
according to INTEL’s module specification. The DIMMs have a serial presence detect, implemented
with a serial E
2
PROM using the 2-pin I
2
C protocol. The first 128 bytes are utilized by the DIMM
manufacturer and the second 128 bytes are available to the end user. All Infineon 168-pin DIMMs
provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint, with 1.25“
(31.75 mm) height.
INFINEON Technologies
1
9.01
HYS 64/72V64220GU
SDRAM-Modules
Ordering Information
Type
HYS 64V64220GU-7-D
HYS 72V64220GU-7-D
Code
Package
Descriptions
Module
Height
1.25“
1.25“
1.25“
1.25“
1.25“
1.25“
PC133-222-520 L-DIM-168-30 PC133 64M
×
64 2 bank
SDRAM module
PC133-222-520 L-DIM-168-30 PC133 64M
×
72 2 bank
SDRAM module
HYS 64V64220GU-7.5-C2 PC133-333-520 L-DIM-168-30 PC133 64M
×
64 2 bank
HYS 64V64220GU-7.5-D
SDRAM module
HYS 72V64220GU-7.5-C2 PC133-333-520 L-DIM-168-30 PC133 64M
×
72 2 bank
SDRAM module
HYS 72V64220GU-7.5-D
HYS 64V64220GU-8-C2
HYS 72V64220GU-8-C2
PC100-222-620 L-DIM-168-30 PC100 64M
×
64 2 bank
SDRAM module
PC100-222-620 L-DIM-168-30 PC100 64M
×
72 2 bank
SDRAM module
Note: All part numbers end with a place code, designating the die revision. Consult factory for
current revision. Example: HYS 64V64220GU-8-C2, indicating Rev.C2 dies are used for
SDRAM components.
ames in paranthese are for the x72 ECC versions; example: Pin 106 = (CB5)
Pin Definitions and Functions
A0 - A12
BA0, BA1
CB0 - CB7
RAS
CAS
WE
Address Inputs
Bank Selects
CLK0 - CLK3
CS0 - CS3
Clock Input
Chip Select
Power (+ 3.3 V)
Ground
Clock for Presence Detect
Serial Data Out for
Presence Detect
No Connection
DQMB0 - DQMB7 Data Mask
DQ0 - DQ63 Data Input/Output
Row Address Strobe
Column Address Strobe
Read/Write Input
Check Bits (x72 organization only)
V
DD
V
SS
SCL
SDA
N.C./DU
CKE0, CKE1 Clock Enable
Address Format
Part Number
Rows Columns
10
Bank Select
2
Refresh Period Interval
8k
64 ms
7.8
µ
s
64M
×
64/72 HYS64/72V64220GU 13
INFINEON Technologies
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9.01
HYS 64/72V64220GU
SDRAM-Modules
Pin Configuration
PIN# Symbol
PIN#
Symbol
PIN#
Symbol
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
DD
DQ46
DQ47
N.C. (CB4)
N.C. (CB5)
V
SS
N.C.
N.C.
V
DD
CAS
DQMB4
DQMB5
CS1
RAS
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
CLK1
A12
PIN#
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Symbol
V
SS
CKE0
CS3
DQMB6
DQMB7
N.C.
V
DD
N.C.
N.C.
CB6
CB7
V
SS
DQ48
DQ49
DQ50
DQ51
V
DD
DQ52
N.C.
DU
N.C.
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
CLK3
N.C.
SA0
SA1
SA2
V
DD
1
V
SS
43
V
SS
85
2
DQ0
44
DU
86
87
3
DQ1
45
CS2
4
DQ2
46
DQMB2
88
5
DQ3
47
DQMB3
89
48
DU
90
6
V
DD
91
7
DQ4
49
V
DD
8
DQ5
50
N.C.
92
9
DQ6
51
N.C.
93
10
DQ7
52
N.C. (CB2)
94
11
DQ8
53
N.C. (CB3)
95
54
V
SS
96
12
V
SS
13
DQ9
55
DQ16
97
14
DQ10
56
DQ17
98
15
DQ11
57
DQ18
99
16
DQ12
58
DQ19
100
101
17
DQ13
59
V
DD
18
V
DD
60
DQ20
102
19
DQ14
61
N.C.
103
20
DQ15
62
DU
104
21
N.C. (CB0)
63
CKE1
105
106
22
N.C. (CB1)
64
V
SS
23
V
SS
65
DQ21
107
24
N.C.
66
DQ22
108
25
N.C.
67
DQ23
109
68
V
SS
110
26
V
DD
27
WE
69
DQ24
111
28
DQMB0
70
DQ25
112
29
DQMB1
71
DQ26
113
72
DQ27
114
30
CS0
115
31
DU
73
V
DD
32
V
SS
74
DQ28
116
33
A0
75
DQ29
117
34
A2
76
DQ30
118
35
A4
77
DQ31
119
120
36
A6
78
V
SS
37
A8
79
CLK2
121
38
A10
80
N.C.
122
39
BA1
81
WP
123
82
SDA
124
40
V
DD
83
SCL
125
41
V
DD
126
42
CLK0
84
V
DD
Note: Pin names in parenthses are for the x72 ECC versions
INFINEON Technologies
3
9.01
HYS 64/72V64220GU
SDRAM-Modules
CS1
CS0
DQMB0
DQ(7:0)
CS
DQM
DQ0-DQ7
D0
CS
DQM
DQ0-DQ7
D1
CS
DQM
DQ0-DQ7
D16
CS
DQM
DQ0-DQ7
D8
CS
DQM
DQ0-DQ7
D9
CS
DQM
DQ0-DQ7
D17
DQMB4
DQ(39:32)
CS
DQM
DQ0-DQ7
D4
CS
DQM
DQ0-DQ7
D5
CS
DQM
DQ0-DQ7
D12
CS
DQM
DQ0-DQ7
D13
DQMB1
DQ(15:8)
DQMB5
DQ(47:40)
CB(7:0)
CS3
CS2
DQMB2
DQ(23:16)
CS
DQM
DQ0-DQ7
D2
CS
DQM
DQ0-DQ7
D3
CS
DQM
DQ0-DQ7
D10
CS
DQM
DQ0-DQ7
D11
DQMB6
DQ(55:48)
CS
DQM
DQ0-DQ7
D6
CS
DQM
DQ0-DQ7
D7
2
CS
DQM
DQ0-DQ7
D14
CS
DQM
DQ0-DQ7
D15
DQMB3
DQ(31:24)
DQMB7
DQ(63:56)
A0-A12, BA0, BA1
V
DD
C
V
SS
RAS, CAS, WE
CKE0
V
DD
D0-D15, (D16, D17)
D0-D15, (D16, D17)
D0-D15, (D16, D17)
D0-D15, (D16, D17)
D0-D7, (D16)
E PROM (256 Word x 8 Bit)
SA0
SA1
SA2
SCL
SA0
SA1
SA2
SCL
SDA
WP
Ω
47 k
Clock Wiring
32 M x 64
CLK0
CLK1
CLK2
CLK3
4 SDRAM +
4 SDRAM +
4 SDRAM +
4 SDRAM +
3.3 pF
3.3 pF
3.3 pF
3.3 pF
32 M x 72
5 SDRAM
5 SDRAM
4 SDRAM + 3.3 pF
4 SDRAM + 3.3 pF
Ω
10 k
CKE1
D9-D15, (D17)
Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10
Ω
except otherwise noted.
BL012
Block Diagram: 64M x 64/72 Two Bank SDRAM DIMM Modules
INFINEON Technologies
4
9.01
HYS 64/72V64220GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
min.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
V
IN,
V
OUT
V
DD
T
STG
P
D
I
OS
– 1.0
– 1.0
-55
–
–
Limit Values
max.
4.6
4.6
+150
1
50
V
V
o
Unit
C
W
mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
< 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
max.
64M
×
64
Input Capacitance
(
A0 to A11, BA0, BA1, RAS, CAS, WE)
Input Capacitance (CS0 - CS3)
Input Capacitance (CLK0 - CLK3)
Input Capacitance (CKE0, CKE1)
Input Capacitance (DQMB0 - DQMB7)
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7)
Input Capacitance (SCL, SA0-2)
Input/Output Capacitance
INFINEON Technologies
5
max.
64M
×
72
144
40
43
72
25
17
8
8
pF
pF
pF
pF
pF
pF
pF
pF
9.01
Unit
Symbol
min.
Limit Values
max.
2.0
– 0.5
2.4
–
– 40
– 40
Unit
V
V
V
V
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
V
DD
+ 0.3
0.8
–
0.4
40
40
µ
A
µ
A
C
I1
C
I2
C
ICL
C
I3
C
I4
C
IO
C
SC
C
SD
105
32
40
65
20
17
8
8
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