DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PZM-NA series
Voltage regulator double diodes
Product specification
Supersedes data of 1999 Jun 02
1999 Jun 11
Philips Semiconductors
Product specification
Voltage regulator double diodes
FEATURES
•
Total power dissipation: max. 220 mW per diode
•
Small plastic package suitable for surface mounted
design
•
Working voltage: nom. 2.4 V and 15 V (E24 range).
APPLICATIONS
•
General regulation functions.
DESCRIPTION
Low power general purpose voltage regulator double
diodes in a SOT346 (SC59) plastic package, suitable for
surface mounted design.
handbook, halfpage
PZM-NA series
PINNING
PIN
1
2
3
cathode
cathode
anode
DESCRIPTION
3
3
1
2
1
Top view
2
MAM407
Fig.1
Simplified outline (SOT346; SC59) and
symbol.
MARKING
TYPE NUMBER
PZM2.4NBA
PZM2.7NB2A
PZM3.0NB2A
PZM3.3NB2A
PZM3.6NB2A
PZM3.9NB2A
PZM4.3NB2A
PZM4.7NB2A
PZM5.1NB2A
PZM5.6NB2A
MARKING CODE
2A4
2A7
3A0
3A3
3A6
3A9
4A3
4A7
5A1
5A6
TYPE NUMBER
PZM6.2NB2A
PZM6.8NB2A
PZM7.5NB2A
PZM8.2NB2A
PZM9.1NB2A
PZM10NB2A
PZM11NB2A
PZM12NB2A
PZM13NB2A
PZM15NB2A
MARKING CODE
6A2
6A8
7A5
8A2
9A1
10A
11A
12A
13A
15A
1999 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator double diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
I
F
I
ZSM
P
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit board with Cu clad 5
×
5 mm.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Notes
1. Solderpoint of cathode tab.
2. Device mounted on an FR4 printed circuit board with Cu clad 5
×
5 mm.
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
one diode loaded; note 1
one diode loaded; note 2
continuous forward current
non-repetitive peak current
power dissipation; see note 1
storage temperature
operating junction temperature
t
p
= 100
µs;
square wave
T
amb
= 25
°C
−
−65
−
−
PARAMETER
CONDITIONS
MIN.
PZM-NA series
MAX.
UNIT
200
see Table 1
220
+150
150
mA
mW
°C
°C
VALUE
350
560
UNIT
K/W
K/W
1999 Jun 11
3
Philips Semiconductors
Product specification
Voltage regulator double diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
PZM2.4NBA
PZM2.7NB2A
PZM3.0NB2A
PZM3.3NB2A
PZM3.6NB2A
PZM3.9NB2A
PZM4.3NB2A
PZM4.7NB2A
PZM5.1NB2A
PZM5.6NB2A
PZM6.2NB2A
PZM6.8NB2A
PZM7.5NB2A
PZM8.2NB2A
PZM9.1NB2A
PZM10NB2A
PZM11NB2A
PZM12NB2A
PZM13NB2A
PZM15NB2A
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1.5 V
V
R
= 2.5 V
V
R
= 3.0 V
V
R
= 3.5 V
V
R
= 4.0 V
V
R
= 5.0 V
V
R
= 6.0 V
V
R
= 7.0 V
V
R
= 8.0 V
V
R
= 9.0 V
V
R
= 10.0 V
V
R
= 11.0 V
CONDITIONS
I
F
= 10 mA; see Fig.2
I
F
= 100 mA; see Fig.2
PZM-NA series
MAX.
0.9
1.1
50
20
10
5
5
3
3
3
3
2
2
2
1
700
500
200
100
100
100
70
V
V
UNIT
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
1999 Jun 11
4
Philips Semiconductors
Product specification
Voltage regulator double diodes
Table 1
Per type; PZM2.4N to PZM24N
T
j
= 25
°C
unless otherwise specified.
WORKING
VOLTAGE V
Z
(V)
at I
Z
= 5 mA;
t
m
= 40 ms;
T
amb
= 25
°C
MIN.
2.4NBA
2.7NB2A
3.0NB2A
3.3NB2A
3.6NB2A
3.9NB2A
4.3NB2A
4.7NB2A
5.1NB2A
5.6NB2A
6.2NB2A
6.8NB2A
7.5NB2A
8.2NB2A
9.1NB2A
10NB2A
11NB2A
12NB2A
13NB2A
15NB2A
2.30
2.65
2.95
3.25
3.55
3.87
4.15
4.55
4.98
5.49
6.06
6.65
7.28
8.02
8.85
9.77
10.76
11.74
12.91
14.34
MAX.
2.60
2.90
3.20
3.50
3.80
4.10
4.34
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
10.21
11.22
12.24
13.49
14.98
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
I
Z
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
MAX.
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
I
Z
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
TEMP.
COEFF.
S
Z
(mV/K)
at
I
Z
= 5 mA
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
PZM-NA series
PZM
-XXX
DIODE
CAP.
C
d
(pF)
at
f = 1 MHz;
V
R
= 0
MAX.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs
MAX.
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
3.50
3.50
3.50
3.50
3.00
3.00
2.50
2.00
1999 Jun 11
5
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