Preliminary data
HiPerFAST
TM
IGBT with Diode
Combi Pack
IXGX50N60AU1
IXGX50N60AU1S
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 75 A
= 2.7 V
= 275 ns
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C, limited by leads
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load, L = 30
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
50
200
I
CM
= 100
@ 0.8 V
CES
300
-55 ... +150
150
-55 ... +150
6
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
g
°C
l
G
E
C (TAB)
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
l
l
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
l
Hole-less TO-247 for clip mount
High current capability
High frequency IGBT and anti-
parallel FRED in one package
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.5
250
15
±100
2.7
V
V
µA
mA
nA
V
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 500
µA,
V
GE
= 0 V
= 500
µA,
V
CE
= V
GE
l
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
l
l
l
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
© 1997 IXYS All rights reserved
97513 (5/97)
IXGX50N60AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
25
35
200
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
50
80
50
210
200
275
4.8
50
240
3
280
600
9.6
400
S
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.42 K/W
0.15
K/W
IXGX50N60AU1S
TO-247 HOLE-LESS
g
fs
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
TO-247 HOLE-LESS SMD
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1.7
V
I
F
= I
C90
, V
GE
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 480 A/µs
V
R
= 360 V
T
J
= 125°C
I
F
= 1 A; -di/dt = 200 A/µs; V
R
= 30 V T
J
= 25°C
19
175
35
33
50
A
ns
ns
0.75 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGX50N60AU1
IXGX50N60AU1S
Fig. 1 Saturation Characteristics
80
T
J
= 25°C
Fig. 2 Output Characterstics
350
300
V
GE
= 15V
13V
11V
9V
T
J
= 25°C
70
60
50
40
30
20
10
0
V
GE
= 15V
13V
11V
9V
7V
5V
I
C
- Amperes
I
C
- Amperes
250
200
150
100
50
0
7V
5V
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
V
CE
- Volts
V
CE
- Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
8
7
T
J
= 25°C
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
1.4
I
C
= 80A
V
CE(sat)
- Normalized
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
I
C
= 20A
I
C
= 40A
V
CE
- Volts
6
5
4
3
2
1
0
4
5
6
7
8
9 10 11 12 13 14 15
I
C
= 40A
I
C
= 20A
V
GE
- Volts
T
J
- Degrees C
Fig. 5 Input Admittance
80
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V
GE(th)
@ 250µA
60
BV / V
CE(sat)
- Normalized
70
V
CE
= 100V
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100 125 150
BV
CES
@ 3mA
I
C
- Amperes
50
40
30
20
T
J
= 25°C
10
0
T
J
= 125°C
0
1
2
3
4
5
6
7
8
9
10
V
GE
- Volts
T
J
- Degrees C
© 1997 IXYS All rights reserved
IXGX50N60AU1
IXGX50N60AU1S
Fig.7 Gate Charge
15
12
I
C
= 40A
V
CE
= 500V
Fig.8 Turn-Off Safe Operating Area
100
10
I
C
- Amperes
V
GE
- Volts
9
6
3
0
T
J
= 125°C
1
dV/dt < 3V/ns
0.1
0.01
0
50
100
150
200
250
0
100
200
300
400
500
600
700
Total Gate Charge - (nC)
V
CE
- Volts
Fig.9
4500
4000
Capacitance Curves
Capacitance - pF
3500
3000
2500
2000
1500
1000
500
0
0
C
res
C
ies
= IXGK 50N60AU1
C
oes
5
10
15
20
25
V
CE
- Volts
Fig.10
1
D=0.5
Transient Thermal Impedance
Z
thJC
(K/W)
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGX50N60AU1
IXGX50N60AU1S
© 1997 IXYS All rights reserved
Embedded System
京公网安备 11010802033920号
EEWORLD
