V
CES
Low V
CE(sat)
IGBT
High Speed IGBT
IXSH/IXSM 25 N100
1000 V
IXSH/IXSM 25 N100A 1000 V
I
C25
50 A
50 A
V
CE(sat)
3.5 V
4.0 V
Short Circuit SOA Capability
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
g
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 4.7
Ω
Clamped inductive load, L = 30
µH
V
GE
= 15 V, V
CE
= 0.6 • V
CES
, T
J
= 125°C
R
G
= 33
Ω,
non repetitive
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
50
25
100
I
CM
= 50
@ 0.8 V
CES
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
µs
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
W
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
5
T
J
= 25°C
T
J
= 125°C
8
250
1
±100
25N100
25N100A
3.5
4.0
V
V
µA
mA
nA
V
V
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 20 kHz
q
q
q
q
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
q
q
q
q
q
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
© IXYS Corporation. All rights reserved.
IXYS reserves the right to change limits, test conditions and dimensions.
91548F (4/96)
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXSH 25N100
IXSM 25N100
IXSH 25N100A IXSM 25N100A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
10
17
140
2850
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
210
50
112
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= 4.7
Ω
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
=
125°C
°
I
C
= I
C90
, V
GE
= 15 V,
L = 100
µH
V
CE
= 0.8 V
CES
,
R
G
= 4.7
Ω
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
25N100
25N100A
25N100
25N100A
25N100
25N100A
25N100
25N100A
28
50
70
580
150
1200
800
10
8
70
580
4.2
200
1500
1000
15
11
550
3000
1500
130
40
75
S
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.63 K/W
0.25
K/W
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
I
C(on)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
V
GE
= 15 V, V
CE
= 10 V
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXSH 25N100
IXSM 25N100
IXSH 25N100A IXSM 25N100A
Fig. 1 Saturation Characteristics
50
T
J
= 25°C
V
GE
= 15V
Fig. 2
180
160
140
T
J
= 25°C
Output Characterstics
13V 11V
40
V
GE
=15V
I
C
- Amperes
I
C
- Amperes
120
100
80
60
40
20
30
20
9V
13V
11V
10
7V
9V
7V
0
0
1
2
3
4
5
0
0
2
4
6
8
10 12 14 16 18 20
V
CE
- Volts
V
CE
- Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
8
7
T
J
= 25°C
Fig. 4
1.6
V
GE
= 15V
Temperature Dependence
of Output Saturation Voltage
I
C
= 50A
6
5
4
3
2
1
0
8
9
10
11
12
13
V
CE(sat)
- Normalized
1.4
1.2
I
C
= 25A
V
CE
- Volts
I
C
= 50A
I
C
= 25A
I
C
= 12.5A
1.0
0.8
0.6
-50
I
C
= 12.5A
14
15
-25
0
25
50
75
100
125
150
V
GE
- Volts
T
J
- Degrees C
Fig. 5 Input Admittance
50
V
CE
= 10V
1.3
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
40
BV / V
GE(th)
- Normalized
1.2
V
GE(th)
I
C
= 2.5mA
I
C
- Amperes
1.1
1.0
30
20
10
0
5
6
7
8
9
10 11 12 13 14 15
T
J
= 125°C
T
J
= 25°C
T
J
= - 40°C
0.9
BV
CES
I
C
= 3mA
0.8
0.7
-50
-25
0
25
50
75
100
125
150
GE
© IXYS Corporation. All rights reserved.
V
- Volts
T
J
- Degrees C
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXSH 25N100
IXSM 25N100
IXSH 25N100A IXSM 25N100A
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
1500
T
J
= 125°C
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on R
G
20
1500
T
J
= 125°C
10
I
C
= 25A
1200
R
G
= 10Ω
18
16
9
8
6
5
4
3
2
1
0
7
1200
t
fi
- nanoseconds
E
off
- Millijoules
900
600
300
0
t
fi
12
10
8
6
4
2
0
900
600
300
0
0
t
fi
E
off
E
off
10
15
20
25
30
35
40
45
50
10 20 30 40 50 60 70 80 90 100
I
C
- Amperes
R
G
- Ohms
Fig.9 Gate Charge Characteristic Curve
15
12
V
CE
= 500V
I
C
= 25A
Fig.10
100
Turn-Off Safe Operating Area
T
J
= 125°C
10
R
G
= 4.7Ω
dV/dt < 6V/ns
9
6
3
0
0
25
50
75
100
125
150
I
C
- Amperes
V
GE
- Volts
1
0.1
0.01
0
200
400
600
800
1000
Q
G
- nanocoulombs
V
CE
- Volts
Fig.11 Transient Thermal Impedance
1.000
D=0.5
D=0.2
Z
thJC
- K/W
0.100
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.010
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
E
off
- Millijoules
14
t
fi
- nanoseconds
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
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