Low V
CE(sat)
IGBT
High Speed IGBT
Short Circuit SOA Capability
V
CES
IXSH/IXSM
IXSH/IXSM
30N60
30N60A
600 V
600 V
I
C25
50 A
50 A
V
CE(sat)
2.5 V
3.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 4.7
Ω
Clamped inductive load, L = 100
µH
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125°C
R
G
= 33
Ω,
non repetitive
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
50
30
100
I
CM
= 60
@ 0.8 V
CES
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
µs
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
W
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
l
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
l
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
5
T
J
= 25°C
T
J
= 125°C
8
100
1
±100
30N60
30N60A
2.5
3.0
V
V
µA
mA
nA
V
V
l
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 20 kHz
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
Applications
l
l
l
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
l
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
© 1998 IXYS All rights reserved
91549H (9/98)
IXSH 30N60
IXSM 30N60
IXSH 30N60A IXSM 30N60A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
7
13
100
2760
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
51
110
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
34
47
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= 4.7
Ω
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
µH
V
CE
= 0.8 V
CES
,
R
G
= 4.7
Ω
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
30N60
30N60A
30N60
30N60A
30N60
30N60A
30N60
30N60A
30N60
30N60A
60
130
400
400
200
5.0
2.5
60
130
1.0
540 1000
340
525
600 1500
340
700
12
6
150
45
63
S
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
mJ
ns
ns
mJ
ns
ns
ns
ns
mJ
mJ
0.63 K/W
0.25
K/W
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
I
C(on)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
V
GE
= 15 V, V
CE
= 10 V
IXSH 30N60 and IXSH 30N60A characteristic curves are located on the
IXSH 30N60U1 and IXSH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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