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BAV70

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size136KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
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Rectifier Diode,

BAV70 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.075 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BL
Galaxy Electrical
Dual surface mount switching diode
FEATURES
Fast switching speed.
High conductance.
Common cathode.
For general purpose switching appilications.
Surface mount package ideally suited
for automatic insertion.
Production specification
BAV70
Pb
Lead-free
SOT-23
APPLICATIONS
Small signal switching
ORDERING INFORMATION
Type No.
BAV70
Marking
A4
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive reverse voltage
Working peak reverse voltage
DC Reverse Voltage
RMS Reverse Voltage
Forward continuous Current
Average rectified output current
Non-repetitive forward Surge Current
@t=1.0μs
@t=1.0s
Power Dissipation
Thermal resistance,junction to ambient
air
Junction temperature
Storage temperature range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
53
300
150
V
mA
mA
75
V
Limits
100
Unit
V
I
FSM
2.0
1.0
A
P
d
R
θjA
T
j
T
stg
350
357
150
-65-+150
mW
℃/W
Document number: BL/SSSDC035
Rev.A
www.galaxycn.com
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