High Gain Darlington Output
Optocouplers
Technical Data
4N45
4N46
Features
• High Current Transfer
Ratio–1500% Typical
• Low Input Current
Requirement–0.5 mA
• Performance Guaranteed
over 0
°
C to 70
°
C
Temperature Range
• Internal Base-Emitter
Resistor Minimizes Output
Leakage
• Gain-Bandwidth Adjustment
Pin
• Safety Approval
UL Recognized -3750 V rms for
1 Minute
CSA Approved
IEC/EN/DIN EN 60747-5-2
Description
The 4N45/46 optocouplers
contain a GaAsP light emitting
diode optically coupled to a high
gain photodetector IC.
The excellent performance over
temperature results from the
inclusion of an integrated emitter-
base bypass resistor which shunts
photodiode and first stage
leakage currents as well as
bleeding off excess base drive to
ground. External access to the
second stage base provides the
capability for better noise
rejection than a conventional
photodarlington detector. An
external resistor or capacitor at
the base can be added to make a
gain-bandwidth or input current
threshold adjustment. The base
lead can also be used for
feedback.
The high current transfer ratio at
very low input currents permits
circuit designs in which adequate
margin can be allowed for the
effects of optical coupling
variations.
The 4N46 has a 350% minimum
CTR at an input current of only
0.5 mA making it ideal for use in
low input current applications
such as MOS, CMOS and low
power logic interfacing. Compat-
ibility with high voltage CMOS
logic systems is assured by the
20 V minimum breakdown
voltage of the output transistor
and by the guaranteed maximum
output leakage (I
OH
) at 18 V.
The 4N45 has a 250% minimum
CTR at 1.0 mA input current and
a 7 V minimum breakdown
voltage rating.
Selection for lower input current
down to 250
µA
is available upon
request.
Applications
• Telephone Ring Detector
• Digital Logic Ground
Isolation
• Low Input Current Line
Receiver
• Line Voltage Status
Indicator–Low Input Power
Dissipation
• Logic to Reed Relay Interface
• Level Shifting
• Interface Between Logic
Families
Functional Diagram
TRUTH TABLE
(POSITIVE LOGIC)
ANODE 1
6 V
B
LED
ON
OUTPUT
L
H
CATHODE 2
5 V
O
OFF
3
4 GND
*JEDEC Registered Data
**JEDEC Registered up to 70°C.
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
2
Ordering Information
Specify part number followed by Option Number (if desired).
4N45#
XXXX
060 = IEC/EN/DIN EN 60747-5-2 Option.
300 = Gull Wing Surface Mount Lead Option.
500 = Tape/Reel Package Option (1 K min).
XXXE = Lead Free Option.
Option data sheets available. Contact your Agilent sales representative or authorized distributor for information.
Remarks: The notation “#” is used for existing products, while (new) products launched since 15th July 2001 and lead free option will use “–”
Schematic
1
ANODE
+
V
F
CATHODE
–
2
4
I
F
I
O
5
V
O
Outline Drawing
9.40 (0.370)
9.90 (0.390)
6
5
4
TYPE
NUMBER
DATE CODE
UL
RECOGNITION
7.36 (0.290)
7.88 (0.310)
0.20 (0.008)
0.33 (0.013)
A XXXX
YYWW RU
GND
5° TYP.
TRUTH TABLE
(POSITIVE LOGIC)
LED
OUTPUT
ON
L
OFF
H
6
V
B
PIN
ONE
DOT
1
2
3
6.10 (0.240)
6.60 (0.260)
1.78 (0.070) MAX.
4.70 (0.185) MAX.
ANODE 1
6
V
B
(0.020)
(0.040)
2.66 (0.105) MIN.
0.45 (0.018)
0.65 (0.025)
2.28 (0.090)
2.80 (0.110)
CATHODE 2
5
V
O
GND
3
2.16 (0.085)
2.54 (0.100)
4
DIMENSIONS IN MILLIMETERS AND (INCHES).
Outline Drawing – Option 300
9.65 ± 0.25
(0.380 ± 0.010)
LAND PATTERN RECOMMENDATION
6.35 ± 0.25
(0.250 ± 0.010)
10.9 (0.430)
1.27 (0.050)
2.0 (0.080)
1.78
(0.070)
MAX.
4.19
MAX.
(0.165)
9.65 ± 0.25
(0.380 ± 0.010)
7.62 ± 0.25
(0.300 ± 0.010)
0.635 ± 0.130
(0.025 ± 0.005)
0.20 (0.008)
0.30 (0.013)
2.29
(0.090)
2.54
(0.100)
TYP.
0.635 ± 0.25
(0.025 ± 0.010)
12° NOM.
NOTE: FLOATING LEAD PROTRUSION IS 0.25 mm (10 mils) MAX.
3
Solder Reflow Thermal Profile
300
PREHEATING RATE 3°C + 1°C/–0.5°C/SEC.
REFLOW HEATING RATE 2.5°C ± 0.5°C/SEC.
PEAK
TEMP.
245°C
PEAK
TEMP.
240°C
PEAK
TEMP.
230°C
2.5°C ± 0.5°C/SEC.
160°C
150°C
140°C
3°C + 1°C/–0.5°C
30
SEC.
30
SEC.
SOLDERING
TIME
200°C
TEMPERATURE (°C)
200
100
PREHEATING TIME
150°C, 90 + 30 SEC.
50 SEC.
TIGHT
TYPICAL
LOOSE
ROOM
TEMPERATURE
0
0
50
100
150
200
250
TIME (SECONDS)
Recommended Pb-Free IR Profile
TIME WITHIN 5 °C of ACTUAL
PEAK TEMPERATURE
20-40 SEC.
t
p
T
p
T
L
260 +0/-5 °C
217 °C
RAMP-UP
3 °C/SEC. MAX.
150 - 200 °C
TEMPERATURE
T
smax
T
smin
RAMP-DOWN
6 °C/SEC. MAX.
t
s
PREHEAT
60 to 180 SEC.
25
t 25 °C to PEAK
TIME
t
L
60 to 150 SEC.
NOTES:
THE TIME FROM 25 °C to PEAK TEMPERATURE = 8 MINUTES MAX.
T
smax
= 200 °C, T
smin
= 150 °C
4
Regulatory Information
The 4N45 and 4N46 have been
approved by the following
regulatory organizations:
UL
Recognized under UL 1577,
Component Recognition
Program, File E55361.
IEC/EN/DIN EN 60747-5-2
Approved under:
IEC 60747-5-2:1997 + A1:2002
EN 60747-5-2:2001 + A1:2002
DIN EN 60747-5-2 (VDE 0884
Teil 2):2003-01.
(Option 060 only)
CSA
Approved under CSA Component
Acceptance Notice #5, File CA
88324.
Insulation and Safety Related Specifications
Parameter
Min. External Air Gap
(External Clearance)
Min. External Tracking Path
(External Creepage)
Min. Internal Plastic Gap
(Internal Clearance)
Symbol
L(IO1)
L(IO2)
Value Units
7.1
7.4
0.08
mm
mm
mm
Conditions
Measured from input terminals to output
terminals, shortest distance through air
Measured from input terminals to output
terminals, shortest distance path along body
Through insulation distance, conductor to
conductor, usually the direct distance
between the photoemitter and photodetector
inside the optocoupler cavity
DIN IEC 112/VDE 0303 PART 1
Material Group (DIN VDE 0110, 1/89, Table 1)
Tracking Resistance
(Comparative Tracking Index)
Isolation Group
CTI
200
IIIa
Volts
Option 300 – surface mount classification is Class A in accordance with CECC 00802.
Absolute Maximum Ratings
Storage Temperature, T
S
............................................. -55°C to +125°C
Operating Temperature, T
A
........................................... -40°C to +85°C
Lead Solder Temperature, max .......................................... 260°C for 10 s
(1.6 mm below seating plane)
Average Input Current, I
F
......................................................... 20 mA
[1]
Peak Input Current, I
F
................................................................... 40 mA
(50% duty cycle, 1 ms pulse width)
Peak Transient Input Current, I
F
...................................................... 1.0 A
(≤ 1
µs
pulse width, 300 pps)
Reverse Input Voltage, V
R
................................................................. 5 V
Input Power Dissipation, P
I
.................................................... 35 mW
[2]
Output Current, I
O
(Pin 5) ...................................................... 60 mA
[3]
Emitter-Base Reverse Voltage (Pins 4-6) .......................................... 0.5 V
Output Voltage, V
O
(Pin 5-4)
4N45 ................................................................................. -0.5 to 7 V
4N46 ............................................................................... -0.5 to 20 V
Output Power Dissipation ..................................................... 100 mW
[4]
Infrared and Vapor Phase Reflow Temperature
(Option #300) .......................................... see Fig. 1, Thermal Profile
5
Recommended Operating Conditions
Parameter
Output Voltage (4N46)
Output Voltage (4N45)
Input Current (High)
Input Voltage (Low)
Operating Temperature
Symbol
V
O
I
F(ON)
V
F(OFF)
T
A
Min.
4.5
4.5
0.5
0
0
Max.
20
7
10
0.8
70
Units
V
V
mA
V
°C
DC Electrical Specifications
Over recommended temperature (T
A
= 0°C to 70°C), unless otherwise specified.
Parameter
Current Transfer
Ratio
Device Symbol Min.
4N46
CTR
350*
500*
200*
4N45
250*
200*
4N46
V
OL
Typ.*
1500
1500
600
1200
500
0.90
0.92
0.95
0.90
0.95
0.001
0.001
1.4
Max. Units
Test Conditions
Fig. Note
3200 %
I
F
= 0.5 mA, V
O
= 1.0 V
3, 4, 5, 6,
2000
I
F
= 1.0 mA, V
O
= 1.0 V
5, 11,
8
1000
I
F
= 10 mA, V
O
= 1.2 V
12
2000 %
I
F
= 1.0 mA, V
O
= 1.0 V
1000
I
F
= 10 mA, V
O
= 1.2 V
1.0
V
I
F
= 0.5 mA, I
OL
= 1.75 mA
3
6
1.0
I
F
= 1.0 mA, I
OL
= 5.0 mA
1.2
I
F
= 10 mA, I
OL
= 20 mA
1.0
V
I
F
= 1.0 mA, I
OL
= 2.5 mA
1.2
I
F
= 10 mA, I
OL
= 20 mA
100
µA
I
F
= 0 mA, V
O
= 18 V
6
250
µA
I
F
= 0 mA, V
O
= 5 V
1.7*
V
T
A
= 25°C I
F
= 1.0 mA
2
1.75
-1.8
mV/°C I
F
= 1.0 mA
V
60
pF
I
R
= 10
µA
f = 1 MHz, V
F
= 0
Logic Low
Output Voltage
4N45
Logic High
Output Current
4N46
4N45
Input Forward Voltage
I
OH
*
V
F
∆V
F
∆T
A
BV
R
*
C
IN
Temperature Coefficient
of Forward Voltage
Input Reverse Breakdown
Voltage
Input Capacitance
5
Switching Specifications
(Over recommended temperature T
A
= 0°C to 70°C unless otherwise specified. V
CC
= 5.0 V.
Parameter
Symbol Min. Typ.* Max. Units
Test Conditions
Fig. Note
Propagation Delay Time
t
PHL
80
µs
T
A
= 25°C I
F
= 0.5 mA
6, 7,
6, 8
to Logic Low at Output
R
L
= 10 kΩ
8, 9,
11, 13
t
PHL
5
50*
T
A
= 25°C I
F
= 10 mA
60
R
L
= 2.2 kΩ
Propagation Delay Time
t
PLH
1500
µs
T
A
= 25°C I
F
= 10 mA
6, 7,
6, 8
to Logic High at Output
R
L
= 10 kΩ
8, 9,
11, 13
t
PLH
150 500*
T
A
= 25°C I
F
= 10 mA
600
R
L
= 220 kΩ
Common Mode
|CM
H
|
500
V/µs
I
F
= 0 mA, R
L
= 10 kΩ
10
9
Transient Immunity at
|V
CM
| = 10 V
P-P
High Output Level
Common Mode
|CM
L
|
500
V/µs
I
F
= 1.0 mA, R
L
= 10 kΩ
10
9
Transient Immunity at
|V
CM
| = 10 V
P-P
Low Output Level
*JEDEC Registered Data.
**All typicals at T
A
= 25°C, unless otherwise noted.
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