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BUL146G, BUL146FG
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146G / BUL146FG have an applications specific
state−of−the−art die designed for use in fluorescent electric lamp
ballasts to 130 W and in Switchmode Power supplies for all types of
electronic equipment.
Features
♦
♦
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•
Improved Efficiency Due to Low Base Drive Requirements:
•
•
•
•
•
High and Flat DC Current Gain
Fast Switching
♦
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Full Characterization at 125°C
Two Packages Choices: Standard TO−220 or Isolated TO−220
Parametric Distributions are Tight and Consistent Lot−to−Lot
BUL146F, Case 221D, is UL Recognized to 3500 V
RMS
: File # E69369
These Devices are Pb−Free and are RoHS Compliant*
Rating
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
V
ISOL1
V
ISOL2
V
ISOL3
P
D
Value
400
700
9.0
6.0
15
4.0
8.0
BUL146F
4500
3500
1500
100
40
0.8
0.32
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
1
W
W/_C
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
MARKING
DIAGRAMS
MAXIMUM RATINGS
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
1
2
BUL146G
AYWW
TO−220AB
CASE 221A−09
STYLE 1
3
RMS Isolation Voltage (Note 2)
(for 1 sec, R.H. < 30%, T
C
= 25_C)
BUL146FG
AYWW
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
Total Device Dissipation @ T
C
= 25_C
BUL146
BUL146F
Derate above 25°C
BUL146
BUL146F
Operating and Storage Temperature
2
3
T
J
, T
stg
_C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
BUL146
BUL146F
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
Max
1.25
3.125
62.5
260
Unit
_C/W
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
R
qJA
T
L
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
2. Proper strike and creepage distance must be provided.
1
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
BUL146/D
©
Semiconductor Components Industries, LLC, 2010
April, 2010
−
Rev. 9
BUL146G, BUL146FG
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
Collector Cutoff Current
(V
CE
= 500 V, V
EB
= 0)
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I
C
= 1.3 Adc, I
B
= 0.13 Adc)
Base−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 0.6 Adc)
Collector−Emitter Saturation Voltage (I
C
= 1.3 Adc, I
B
= 0.13 Adc)
(T
C
= 125°C)
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 0.6 Adc)
(T
C
= 125°C)
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 5.0 Vdc)
(T
C
= 125°C)
(I
C
= 1.3 Adc, V
CE
= 1.0 Vdc)
(T
C
= 125°C)
(I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
(T
C
= 125°C)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
f
T
C
OB
C
IB
(I
C
= 1.3 Adc
I
B1
= 300 mAdc
V
CC
= 300 V)
1.0
ms
3.0
ms
1.0
ms
3.0
ms
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 8.0 V)
−
−
−
−
−
−
−
−
−
−
−
14
95
1000
2.5
6.5
0.6
2.5
3.0
7.0
0.75
1.4
−
150
1500
−
−
−
−
−
−
−
−
MHz
pF
pF
h
FE
V
CE(sat)
V
BE(sat)
−
−
−
−
−
−
14
−
12
12
8.0
7.0
10
0.82
0.93
0.22
0.20
0.30
0.30
−
30
20
20
13
12
20
1.1
1.25
0.5
0.5
0.7
0.7
34
−
−
−
−
−
−
−
Vdc
Vdc
(T
C
= 125°C)
(T
C
= 125°C)
V
CEO(sus)
I
CEO
I
CES
400
−
−
−
−
−
−
−
−
−
−
−
−
100
100
500
100
100
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
I
EBO
mAdc
Dynamic Saturation Voltage:
Determined 1.0
ms
and
3.0
ms
respectively after
rising I
B1
reaches 90% of
final I
B1
(see Figure 18)
V
CE(dsat)
V
(I
C
= 3.0 Adc
I
B1
= 0.6 Adc
V
CC
= 300 V)
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2
BUL146G, BUL146FG
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
ms)
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
(I
C
= 3.0 Adc, I
B1
= 0.6 Adc
I
B1
= 1.5 Adc, V
CC
= 300 V)
(I
C
= 1.3 Adc, I
B1
= 0.13 Adc
I
B2
= 0.65 Adc, V
CC
= 300 V)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
t
on
t
off
t
on
t
off
−
−
−
−
−
−
−
−
100
90
1.35
1.90
90
100
1.7
2.1
200
−
2.5
−
150
−
2.5
−
ns
ms
ns
ms
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
(I
C
= 3.0 Adc, I
B1
= 0.6 Adc
I
B2
= 0.6 Adc)
(I
C
= 3.0 Adc, I
B1
= 0.6 Adc
I
B2
= 1.5 Adc)
(I
C
= 1.3 Adc, I
B1
= 0.13 Adc
I
B2
= 0.65 Adc)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
t
fi
t
si
t
c
t
fi
t
si
t
c
t
fi
t
si
t
c
−
−
−
−
−
−
−
−
−
−
−
−
80
−
2.6
−
−
−
115
120
1.35
1.75
200
210
85
100
1.75
2.25
175
200
−
210
−
4.5
230
400
200
−
2.5
−
350
−
150
−
2.5
−
300
−
180
−
3.8
−
350
−
ns
ms
ns
ns
ms
ns
ns
ms
ns
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3
BUL146G, BUL146FG
TYPICAL STATIC CHARACTERISTICS
100
T
J
= 125°C
h FE , DC CURRENT GAIN
T
J
= 25°C
T
J
= - 20°C
V
CE
= 1 V
h FE , DC CURRENT GAIN
100
T
J
= 125°C
T
J
= 25°C
T
J
= - 20°C
V
CE
= 5 V
10
10
1
0.01
0.1
1
10
1
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
T
J
= 25°C
10
V CE , VOLTAGE (V)
V CE , VOLTAGE (V)
1
1
I
C
= 1 A
2A
3A
5A
6A
0.1
I
C
/I
B
= 10
T
J
= 25°C
T
J
= 125°C
0.1
1
10
I
C
/I
B
= 5
0
0.01
0.1
1
10
0.01
0.01
I
B
, BASE CURRENT (mA)
I
C
COLLECTOR CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.2
1.1
1
V BE , VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
T
J
= 125°C
0.1
1
I
C
/I
B
= 5
I
C
/I
B
= 10
10
T
J
= 25°C
10000
C
ib
1000
C, CAPACITANCE (pF)
T
J
= 25°C
f = 1 MHz
100
C
ob
10
0.4
0.01
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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