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309UR200P3PBF

Description
330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size93KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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309UR200P3PBF Overview

330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB

309UR200P3PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-CUPM-X1
Reach Compliance Codecompliant
Other featuresHIGH SURGE CAPABILITY
applicationHIGH VOLTAGE HIGH POWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-205AB
JESD-30 codeO-CUPM-X1
Maximum non-repetitive peak forward current8640 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Maximum output current330 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperature40
Base Number Matches1
Bulletin I2032 rev. A 12/94
301U(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Wide current range
High voltage ratings up to 2500V
High surge current capabilities
Stud cathode and stud anode version
300A
TypicalApplications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
301U(R)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
80 to 200
330
120
520
8250
8640
340
311
800 to 2000
- 40 to 180
250
300
120
470
6050
6335
183
167
2500
- 40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
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