FLK207MH-14
X, Ku Band Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 32.5dBm(Typ.)
High Gain: G1dB = 6.0dB(Typ.)
High PAE:
η
add = 27%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK207MH-14 is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna
stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
12.5
-65 to +175
175
Unit
V
V
W
°C
°C
Eudyna
recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with
gate resistance of 250Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
MH
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 500mA
VDS = 5V, IDS = 40mA
IGS = -40µA
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 14.5 GHz
Channel to Case
Min.
-
-
-1.0
-5
31.5
5.0
-
-
Limit
Typ. Max.
800
400
-2.0
-
32.5
6.0
27
10
1200
-
-3.5
-
-
-
-
12
Unit
mA
mS
V
V
dBm
dB
%
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
August 1999
1
FLK207MH-14
X, Ku Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1000
800
Drain Current (mA)
600
400
200
VGS =0V
-0.5V
-1.0V
-1.5V
-2.0V
0
50
100
150
200
0
2
4
6
8
10
Total Power Dissipation (W)
16
12
8
4
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
f = 14.5GHz
IDS
≈
0.6 IDSS
VDS=10V
VDS=8.5V
Pout
P1dB &
η
add vs. VDS
f = 14.5 GHz
IDS
≈
0.6 IDSS
Output Power (dBm)
32
30
28
26
24
P1dB (dBm)
33
32
31
30
29
8
9
10
η
add
P1dB
η
add (%)
30
20
10
40
η
add
20
18 20 22 24 26 28
Input Power (dBm)
Drain-Source Voltage (V)
2
η
add (%)
40
FLK207MH-14
X, Ku Band Power GaAs FET
+j50
+j25
13
12
11
16
10GHz
14
15
16
11
12
S11
S22
+j100
+90°
S21
S12
10GHz
+j10
+j250
13
14
15
16
0
10
15
25
13
50Ω
14
250
180°
12
11 10GHz
14 15
13
16
12
10GHz
.04
0.1
0.2
SCALE FOR |S21|
0°
-j10
-j250
.08
.12
.16
-j25
-j50
-j100
-90°
S-PARAMETERS
VDS = 10V, IDS = 480mA
FREQUENCY
(MHZ)
500
1000
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
S11
MAG
.951
.938
.846
.813
.772
.721
.657
.565
.458
.263
.109
.166
.314
.436
.503
S21
ANG
MAG
7.948
4.366
.594
.623
.674
.701
.781
.842
.905
.955
.969
.948
.913
.843
.812
S12
ANG
115.3
104.8
123.2
126.4
125.9
119.2
110.3
109.1
105.1
95.5
85.3
76.9
65.9
50.5
39.8
SCALE FOR |S12|
S22
ANG
32.8
29.8
154.8
149.7
146.4
148.3
152.1
148.5
143.5
139.4
130.7
127.3
119.9
120.6
129.2
MAG
.023
.024
.018
.023
.024
.027
.030
.039
.040
.048
.050
.047
.045
.033
.014
MAG
.291
.348
.889
.896
.880
.875
.884
.875
.885
.921
.949
.950
.953
.928
.889
ANG
-139.9
-143.6
151.1
147.0
142.6
137.4
132.1
125.8
119.5
113.1
100.2
95.0
90.5
86.0
79.7
-135.0
-159.2
96.5
86.6
77.0
65.2
53.6
38.8
20.2
-9.4
-59.8
-168.0
156.4
134.4
116.8
Download S-Parameters, click here
3
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