AP2605Y
Advanced Power
Electronics Corp.
▼
Fast Switching Characteristic
▼
Lower Gate Charge
▼
Small Footprint & Low Profile Package
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
BV
DSS
R
DS(ON)
I
D
G
D
D
-30V
80mΩ
- 4A
SOT-26
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-4
-3.3
-20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200202041
AP2605Y
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-
-
-
6
-
-
-
5.5
1
2.6
7
6
18
4
400
90
30
Max. Units
-
-
80
120
-3
-
-1
-25
±100
8.8
-
-
-
-
-
-
640
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-4A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±20V
I
D
=-4A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-1.6A, V
GS
=0V
I
S
=-4A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
21
14
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
AP2605Y
45
40
40
T
A
=25
o
C
- 10 V
-7.0V
-I
D
, Drain Current (A)
35
T
A
= 150
o
C
35
- 10 V
-7.0V
30
-I
D
, Drain Current (A)
30
25
25
-5.0V
-4.5V
20
20
-5.0V
-4.5V
15
15
10
10
5
V
G
=-3.0V
0
1
2
3
4
5
6
7
8
9
5
V
G
=-3.0V
0
1
2
3
4
5
6
7
8
0
0
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
1.6
95
I =-4.2A
I
D D
= -3.0 A
T
A
=25
o
T
A
=25
o
C C
Normalized R
DS(ON)
1.4
I
D
=-4.0A
V
G
=10V
R
DS(ON)
(m
Ω
)
85
1.2
75
1.0
65
0.8
55
3
5
7
9
11
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
4
3
2
2
T
j
=150
o
C
T
j
=25
o
C
-V
GS(th)
(V)
1.4
-I
S
(A)
1.5
1
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2605Y
f=1.0MHz
12
1000
-V
GS
, Gate to Source Voltage (V)
10
V
DS
=-24V
I
D
=-4A
8
C
iss
6
C (pF)
100
C
oss
4
C
rss
2
0
0
2
4
6
8
10
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
10
0.1
1ms
-I
D
(A)
1
0.1
0.05
P
DM
0.01
10ms
100ms
0.1
t
T
Single Pulse
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 156℃/W
℃
T
A
=25
o
C
Single Pulse
1s
DC
10
100
0.01
0.1
1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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